VN0545 VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 450V 500V
† MIL visual screening available
RDS(ON) (max) 60Ω 60Ω
ID(ON) (min) 150mA 150mA
Order Number / Package TO-92 — VN0550N3 Die† VN0545ND VN0550ND
7
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices
Package Options
Applications
s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-165 BVDSS BVDGS ± 20V -55°C to +150°C 300°C
SGD
TO-92
Note: See Package Outline section for dimensions.
VN0545/VN0550
Thermal Characteristics
Package TO-92 ID (continuous)* 50mA ID (pulsed) 250mA Power Dissipation @ TC = 25°C 1.0W
°C/W
125
θjc
°C/W
170
θja
IDR* 50mA
IDRM 250mA
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN0550 VN0545 Min 500 450 2 -3.8 4 -5.0 100 10 1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 150 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 300 50 100 350 45 40 1 100 45 8 2 55 10 5 10 15 10 10 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V, ID = 150mA, RGEN = 25Ω pF 60 1.7 Ω %/° C m Ω V mV/°C nA µA mA Typ Max Unit V Conditions VGS = 0V, ID = 1mA VGS = VDS , ID = 1mA VGS = VDS , ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA VGS = 0V, VDS = 25V f = 1 MHz
mA
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen
VDD
RL OUTPUT
D.U.T. 10% 10% INPUT
7-166
VN0545/VN0550
Typical Performance Curves
Output Characteristics
0.5 VGS = 10V 0.25
Saturation Characteristics
8V
0.4 0.20
6V
VGS = 1 0V
8V 6V
ID (amperes)
0.3
ID (amperes)
0.15
0.2
0.10
0.1
0.05
4V 4V
0 0 10 20 30 40 50 0 0 2 4 6 8 10
7
VDS (volts) Transconductance vs. Drain Current
0.40 10
VDS (volts) Power Dissipation vs. Case Temperature
VDS = 25V
0.32 8
GFS (siemens)
0.16
TA = 25°C
PD (watts)
0.24
TA = -55°C
6
4
0.08
TA = 125°C
2 TO-92
0 0 0.1 0.2 0.3 0.4 0.5
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
1.0 1.0
TC (°C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
ID (amperes)
0.1
0.6
TO-92 (DC)
0.4
0.01
0.2
TO-92 PD = 1 W TC = 2 5 °C
TC = 25°C 0.001 1 10 100 1000
0 0.001 0.01 0.1 1 10
VDS (volts)
tp (seconds)
7-167
VN0545/VN0550
Typical Performance Curves
BVDSS Variation with Temperature
100 1.1 80
On-Resistance vs. Drain Current
VGS = 5V
BVDSS (normalized)
RDS(ON) (ohms)
60
VGS = 10V
1.0
40
20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5
Tj (°C) Transfer Characteristics
0.5
ID (amperes) V(th) and RDS Variation with Temperature
1.4 1.8
VDS = 25V
0.4
RDS(ON) @ 10V, 50mA
1.2 1.4
0.3
V(th) @ 1mA
1.0 1.0
150°C
0.2
0.8
0.6
0.1 0.6 0 0.2
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts) Capacitance vs. Drain-to-Source Voltage
100 10
Tj(°C) Gate Drive Dynamic Characteristics
VDS = 10V
8
f = 1MHz
75
105 pF
C (picofarads)
VGS (volts)
6
50
CISS
VDS = 40V
4
112 pF
25 2
COSS
CRSS
0 0 10 20 30 40
50 pF
0 0 0.2 0.4 0.6 0.8 1.0
VDS (volts)
QG (nanocoulombs)
7-168
RDS(ON) (normalized)
VGS(th) (normalized)
TA = -55 ° C
25°C
ID (amperes)
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