VN0550_07

VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral SOURCE-DRAIN diode High input impedance and high gain Complementary N- and P-Channel devices General Description The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ► ► ► ► ► ► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device VN0550N3 VN0550N3-G Package BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (mA) TO-92 500 60 150 -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature1 Value BVDSS BVDGS ±20V -55°C to +150°C +300°C Pin Configuration Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Notes: 1. Distance of 1.6mm from case for 10 seconds. S GD TO-92 (front view) VN0550 Electrical Characteristics (T = 25°C unless otherwise specified) A Symbol BVDSS VGS(th) ΔVGS(th) IGSS IDSS Parameter Drain-to-source breakdown voltage Gate threshold voltage Change in VGS(th) with temperature Gate body leakage current Zero gate voltage drain current Min 500 2.0 150 50 - Typ -3.8 100 350 45 40 1.0 100 45 8.0 2.0 0.8 300 Max 4.0 -5.0 100 10 1.0 60 1.7 55 10 5.0 10 15 10 10 - Units V V mV/OC nA µA mA mA Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating, TA = 125OC VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA VGS = 0V, VDS = 25V, f = 1.0MHz ID(ON) RDS(ON) ΔRDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-state drain current Static drain-to-source ON-state resistance Change in RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON time Rise time Turn-OFF time Fall time Diode forward voltage drop Reverse recovery time Ω %/ C mmho pF O ns VDD = 25V, ID = 150mA, RGEN = 25Ω VGS = 0V, ISD = 500mA VGS = 0V, ISD = 500mA V ns Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Thermal Characteristics Device VN0550 Package TO-92 ID (continuous)* (mA) ID (pulsed) (mA) Power Dissipation @TC = 25OC (W) ( C/W) O θJC (OC/W) θJA IDR* (mA) IDRM (mA) 50 250 1.0 125 170 50 250 Notes: * ID (continuous) is limited by max rated TJ. Switching Waveforms and Test Circuit 10V VDD RL OUTPUT 90% INPUT 0V 10% t(ON) PULSE GENERATOR t(OFF) tr td(OFF) tF RGEN td(ON) VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 2 VN0550 Typical Performance Curves Output Characteristics 0.5 VGS = 10V 0.25 Saturation Characteristics 8V 0.4 0.20 6V VGS = 1 0V 8V 6V ID (amperes) 0.3 ID (amperes) 0.15 0.2 0.10 0.1 0.05 4V 4V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 0.40 10 VDS (volts) Power Dissipation vs. Case Temperature VDS = 25V 0.32 8 GFS (siemens) 0.16 TA = 25°C PD (watts) 0.24 TA = -55°C 6 4 0.08 TA = 125°C 2 TO-92 0 0 0.1 0.2 0.3 0.4 0.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 0.6 TO-92 (DC) 0.4 0.01 0.2 TO-92 PD = 1 W TC = 2 5 °C TC = 25°C 0.001 1 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 VN0550 Typical Performance Curves (cont.) BVDSS Variation with Temperature 100 1.1 80 On-Resistance vs. Drain Current VGS = 5V BVDSS (normalized) RDS(ON) (ohms) 60 VGS = 10V 1.0 40 20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 Tj (°C) Transfer Characteristics 0.5 ID (amperes) V(th) and RDS Variation with Temperature 1.4 1.8 VDS = 25V 0.4 RDS(ON) @ 10V, 50mA 1.2 1.4 0.3 V(th) @ 1mA 1.0 1.0 150°C 0.2 0.8 0.6 0.1 0.6 0 0.2 0 2 4 6 8 10 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj(°C) Gate Drive Dynamic Characteristics VDS = 10V 8 f = 1MHz 75 105 pF C (picofarads) VGS (volts) 6 50 CISS VDS = 40V 4 112 pF 25 2 COSS CRSS 0 0 10 20 30 40 50 pF 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 4 RDS(ON) (normalized) VGS(th) (normalized) TA = -55 ° C 25°C ID (amperes) VN0550 TO-92 Package Outline 0.135 MIN 0.125 - 0.165 0.080 - 0.105 1 2 3 Bottom View 0.175 - 0.205 0.170 - 0.210 123 Seating Plane 0.500 MIN 0.014 - 0.022 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 Front View Side View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN0550 A042607 5