VN10K

VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS / BVDGS 60V RDS(ON) (max) 5.0Ω ID(ON) (min) 0.75A Order Number / Package TO-92 VN10KN3 Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 30V -55°C to +150°C 300°C SGD TO-92 Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN10K Thermal Characteristics Package TO-92 ID (continuous)1,2 0.31A ID (pulsed) 1.0A Power Dissipation @ TC = 25°C 1.0W θjc θja IDR 0.31A IDRM 1.0A °C/W 125 °C/W 170 Notes: 1. ID (continuous) is limited by max rated Tj. 2. VN0106N3 can be used if an ID (continuous) of 0.5 is needed. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS ID(ON) RDS(ON) ∆RDS(th) GFS CISS COSS CRSS t(ON) t(OFF) VSD trr Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(th) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 160 100 48 16 2 60 25 5 10 10 V ns ns VDD = 15V, ID = 0.6A, RGEN = 25Ω VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A pF VDS = 25V, VGS = 0V f = 1 MHz 0.7 0.75 7.5 5.0 Min 60 0.8 -3.8 100 10 500 2.5 Typ Max Unit V V mV/°C nA µA µA A Ω Ω %/°C m Conditions VGS = 0V, ID = 100µA VGS = VDS , ID = 1mA VGS = VDS, ID = 1mA VGS = 15V, VDS = 0V VGS = 0V, VDS = 45V VGS = 0V, VDS = 45V, TA 125°C VGS = 10V, VDS = 10V VGS = 5V, ID = 0.2A VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA, VDS = 10V, ID = 500mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD RL OUTPUT D.U.T. VN10K Typical Performance Curves Output Characteristics 1.0 VGS =10V 0.8 0.8 1.0 VGS =10V Saturation Characteristics 7V 9V 8V 6V 6V ID (amperes) 0.6 ID (amperes) 0.6 5V 0.4 5V 0.4 4V 0.2 0.2 4V 3V 0 0 10 20 30 3V 0 40 50 0 2 4 6 2V 2V 8 10 VDS (volts) Transconductance vs. Drain Current 250 2 VDS (volts) Power Dissipation vs. Case Temperature 200 GFS (m ) PD (watts) 150 TC = 25°C Output Voltage (volts) ID (amperes) 0.1 Input Voltage (volts) Ω 1 TO-92 100 50 VDS = 10V 300µs, 2% Duty Cycle Pulse Test 0 0 200 400 600 800 1000 0 0 25 50 75 100 125 150 ID (mA) Maximum Rated Safe Operating Area 10 10 TC (°C) Switching Waveform 5 1.0 0 TO-92 (DC) 15 10 5 0 0.01 1 10 100 1000 0 10 20 30 40 50 VDS (volts) t – Time(ns) 3 VN10K Typical Performance Curves BVDSS Variation with Temperature 100 1.1 On-Resistance vs. Gate-to-Source Voltage VDS = 0.1V BVDSS (normalized) RDS(ON) (ohms) 1.0 10 0.9 1 -50 0 50 100 150 1 10 100 Tj (°C) Transfer Characteristics 1.0 VDS = 10V 300µs, 2% DUTY CYCLE PULSE TEST 1.0 VDS = 25V 80µs, 1% DUTY CYCLE PULSE TEST VGS (Volts) Output Conductance vs Drain Current 0.8 ID (amperes) GFS (mhos) 0.6 0.1 REDUCTION DUE TO HEATING 0.4 0.2 0 0 2 4 6 8 10 0.01 0.01 0.1 1.0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 50 250 ID (amperes) Transconductance vs Gate-Source Voltage VDS = 10V 3000µs, 2% DUTY CYCLE PULSE TEST CISS 40 200 C (picofarads) 30 Gfs (m ) Ω 150 20 100 COSS 10 50 CRSS 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) VGS (volts) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com