VN2106 VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON) BVDGS (max) 60V 100V
†
Order Number / Package TO-92 VN2106N3 — TO-236AB* – VN2110K1 Die† — VN2110ND Product marking for SOT-23: N1A❋ where ❋ = 2-week alpha date code
4.0Ω 4.0Ω
MIL visual screening available *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
❏ Commercial and Military versions available ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ High input impedance and high gain
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
❏ Motor controls ❏ Amplifiers ❏ Power supply circuits ❏ Converters ❏ Switches ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Options
D GS
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds. 11/12/01
SGD
TO-236AB BVDSS BVDGS ± 20V (SOT-23) top view
TO-92
-55°C to +150°C 300°C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN2106/VN2110
Thermal Characteristics
Package ID (continuous)✝ 0.3A 0.2A ID (pulsed) 1.0A 0.8A Power Dissipation* @ TC = 25°C TO-92 TO-236AB
†
θjc
θja
IDR† 0.3A 0.2A
IDRM 1.0A 0.8A
°C/W
125 200
°C/W
170 350
1.0W 0.36W (TA = 25°C)
ID (continuous) is limited by max rated Tj.
* Total for package.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN2110 VN2106 Min 100 60 0.8 -3.8 0.1 2.4 -5.5 100 1 100 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Typ
Max
Unit V V mV/°C nA µA µA A
Conditions ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 10V, VDS = 25V VGS = 5V, ID = 75mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID =0.5A VGS = 0V, VDS = 25V, f = 1MHz
ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time
0.6 4.5 3.0 0.70 150 400 35 13 4 3 5 6 5 1.2 400 50 25 5 5 8 9 8 1.8 6.0 4.0 1.0
Ω Ω %/°C m
pF
ns
V ns
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
VDD = 25V ID = 0.6A RGEN = 25Ω
ISD = 0.6A, VGS = 0V ISD = 0.6A, VGS = 0V
VDD
RL OUTPUT
D.U.T.
VN2106/VN2110
Typical Performance Curves
Output Characteristics
2.0 VGS = 1.6 2.0 VGS = 1.6
Saturation Characteristics
10V 9V
10V 9V
ID (amperes)
1.2
ID (amperes)
1.2
8V
0.8
8V
0.8
7V 6V
7V 6V 5V 4V 3V
0 2 4 6 8 10
0.4
5V 4V 3V
0 10 20 30 40 50
0.4
0
0
VDS (volts) Transconductance vs. Drain Current
0.5 2.0
VDS (volts) Power Dissipation vs. Case Temperature
0.4
VDS = 25V
GFS (siemens)
PD (watts)
0.3
TA = -55°C 25°C
1.0 TO-92
0.2
125°C
0.1
TO-236AB
0 0 0.2 0.4 0.6 0.8 1.0
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
10 1.0
TC (°C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
1.0
TO-92 (pulsed)
ID (amperes)
0.6
SOT-23 (pulsed) TO-92 (DC) 0.1 SOT-23 (DC)
0.4
TO-236AB PD = 0 .36W TA = 2 5 °C TO-92 PD = 1 W TC = 2 5 °C
0.2
0.01 0.1
T A = 25 ° C 1 10 100 0 0.001 0.01 0.1
1.0
10
VDS (volts)
tp (seconds)
3
VN2106/VN2110
Typical Performance Curves
BVDSS Variation with Temperature
1.1 10
On-Resistance vs. Drain Current
8
VGS = 5V
BVDSS (normalized)
RDS(ON) (ohms)
6
VGS = 10V
1.0
4
2
0.9 -50 0 50 100 150
0 0 0.5 1.0 1.5 2.0 2.5
Tj (°C) Transfer Characteristics
2.0
ID (amperes) VGS(th) and RDS(ON) Variation with Temperature
2.0
VDS = 25V
1.6
1.4
RDS(ON) @ 10V, 0.5A
1.6
VGS(th) (normalized)
1.2 1.2 1.0 0.8 0.8
1.2
0.8
25°C
125°C
0.4
VGS(th) @ 1mA
0.4
0.6 0 0 2 4 6 8 10 -50 0 50 100 150 0
VGS (volts) Capacitance vs. Drain-to-Source Voltage
50 10
Tj (°C) Gate Drive Dynamic Characteristics
f = 1MHz
8
VDS = 10V
C (picofarads)
VGS (volts)
CISS
25
90 pF
6
4
COSS
2
30 pF
CRSS
0 0 10 20 30 40 0 0 0.2 0.4 0.6
VDS = 40V
0.8
1.0
VDS (volts)
QG (nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
TA = -55°C
ID (amperes)
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