VN3205ND

VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 50V † RDS(ON) (max) 0.3Ω VGS(th) (max) 2.4V TO-92 VN3205N3 Order Number / Package 14-Pin P-DIP VN3205N6 TO-243AA* VN3205N8 Die† VN3205ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available Product marking for TO-243AA: Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. VN2L❋ Where ❋ = 2-week alpha date code Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Package Options D1 G1 S1 NC S2 G2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) D4 G4 S4 NC S3 G3 D3 Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. top view BVDSS BVDGS ± 20V 14-pin DIP G D S SGD D -55°C to +150°C 300°C TO-92 TO-243AA (SOT-89) Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN3205 Thermal Characteristics Package TO-92 SOT-89 Plastic DIP * † ‡ ID (continuous)* 1.2A 1.5A 1.5A ID (pulsed) 8.0A 8.0A 8.0A Power Dissipation @ TC = 25°C 1.0W 1.6W (TA = 25°C) 3.0W ‡ θjc °C/W 125 15 41.6 ‡ θja °C/W 170 78 † ‡ IDR* 1.2A 1.5A 1.5A IDRM 8.0A 8.0A 8.0A 83.3 ID (continuous) is limited by max rated Tj. TA = 25°C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Total for package. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 50 0.8 -4.3 1 2.4 -5.5 100 10 1 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance TO-92 and P-DIP SOT-89 TO-92 and P-DIP SOT-89 ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 1.0 0.85 1.5 220 70 20 300 120 30 10 15 25 25 1.6 V ns VGS = 0V, ISD = 1.5A VGS = 0V, ISD = 1A ns VDD = 25V ID = 2A RGEN = 10Ω pF VGS = 0V, VDS = 25V f = 1 MHz 3.0 14 0.45 0.45 0.3 0.3 1.2 Typ Max Unit V V mV/°C nA µA mA A Ω Ω Ω Ω %/°C Conditions VGS = 0V, ID = 10mA VGS = VDS, ID = 10mA VGS = VDS, ID = 10mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 10V, VDS = 5V VGS = 4.5V, ID = 1.5A VGS = 4.5V, ID = 0.75A VGS = 10V, ID = 3A VGS = 10V, ID = 1.5A VGS = 10V, ID = 3A VDS = 25V, ID = 2A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω RL OUTPUT D.U.T. VN3205 Typical Performance Curves Output Characteristics 20 20 Saturation Characteristics VGS = 16 10V VGS = 16 10V ID (amperes) ID (amperes) 12 8V 12 8V 8 6V 8 6V 4 4 4V 3V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 4V 3V VDS (volts) Transconductance vs. Drain Current 5 2.0 VDS (volts) Power Dissipation vs. Temperature 4 VDS = 2 5V 1.6 TO-243AA (T A = 25°C) P-DIP GFS (siemens) TA = - 55 °C 2 25°C 125°C PD (watts) 3 1.2 0.8 T O-92 1 0.4 0 0 2 4 6 8 10 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 TO-92 (pulsed) P-DIP (pulsed) 1.0 TO-243AA (pulsed) TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 1.0 TO-243AA (DC) TO-92 (DC) P-DIP (DC) 0.1 0.6 TO-243AA TA = 2 5 °C PD = 1 .6W 0.4 TC = 25°C .01 0 1 10 100 0.2 TO-92 PD = 1W TC = 25°C 0.01 0.1 1.0 10 0 0.001 VDS (volts) tp (seconds) 3 VN3205 Typical Performance Curves BVDSS Variation with Temperature 1.1 1.0 On-Resistance vs. Drain Current 0.8 VGS = 4.5V BVDSS (normalized) RDS(ON) (ohms) 0.6 VGS = 10V 1.0 0.4 0.2 0.9 -50 0 50 100 150 0 0 4 8 12 16 20 Tj (° C) Transfer Characteristics 10 ID (amperes) VGS(th) and R DS(ON) Variation with Temperature 1.2 1.6 VDS = 25V 8 1.1 RDS(ON) @ 10V, 3A 1.4 25°C 6 1.0 1.2 125°C 4 0.9 1.0 2 0.8 VGS(th) @ 1mA 0.8 0 0 2 4 6 8 10 0.7 -50 0 50 100 150 0.6 VGS (volts) Capacitance vs. Drain-to-Source Voltage 400 10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz 8 300 VDS = 10V C (picofarads) VGS (volts) VDS = 40V 6 CISS 200 325 pF 4 100 COSS CRSS 0 0 10 20 30 40 2 215 pF 0 0 1 2 3 4 5 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) TA = -55°C ID (amperes)