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VP0104

VP0104

  • 厂商:

    SUTEX

  • 封装:

  • 描述:

    VP0104 - P-Channel Enhancement-Mode Vertical DMOS FETs - Supertex, Inc

  • 数据手册
  • 价格&库存
VP0104 数据手册
VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -40V -60V -90V RDS(ON) (max) 8.0Ω 8.0Ω 8.0Ω ID(ON) (min) -0.5A -0.5A -0.5A Order Number / Package TO-92 VP0104N3 VP0106N3 VP0109N3 Die† — — VP0109ND Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) SGD Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 07/08/02 TO-92 BVDSS BVDGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP0104/VP0106/VP0109 Thermal Characteristics Package TO-92 ID (continuous)* -0.25A ID (pulsed) -0.8A Power Dissipation @ TC = 25°C 1.0W θjc θja IDR* -0.25A IDRM -0.8A °C/W 125 °C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS Drain-to-Source Breakdown Voltage VGS(th) ∆V GS(th) IGSS IDSS Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Parameter VP0109 VP0106 VP0104 Min -90 -60 -40 -1.5 5.8 -1.0 -3.5 6.5 -100 -10 -1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 150 -0.15 -0.50 -0.25 -1.2 11 6.0 0.55 190 45 22 3 4 3 8 4 -1.2 400 60 30 8 6 10 12 10 -2.0 V ns ns VDD = -25V ID = -0.5A RGEN = 25Ω ISD = -1.0A, VGS = 0V ISD = -1.0A, VGS = 0V pF 15 8.0 1.0 Ω %/°C m V mV/°C nA µA mA A VGS = VDS, ID = -1.0mA ID = -1.0mA, VGS = VDS VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -25V, ID = -0.5A VGS = 0V, VDS = -25V f = 1 MHz V ID = -1.0mA, VGS = 0V Typ Max Unit Conditions Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω D.U.T. OUTPUT RL VDD VP0104/VP0106/VP0109 Typical Performance Curves Output Characteristics -2.0 -1.0 VGS = -10V -1.6 VGS = -10V -1.2 -0.8 Saturation Characteristics ID (amperes) ID (amperes) -0.6 -8V -0.8 -8V -0.4 -6V -0.4 -6V -0.2 -4V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -4V -8 -10 VDS (volts) Transconductance vs. Drain Current 250 2.0 VDS (volts) Power Dissipation vs. Case Temperature VDS = -25V 200 TA= -55°C TA = 25°C TA = 125°C GFS (millisiemens) PD (watts) 150 TO-92 1.0 100 50 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) -1.0 0.6 TO-92(DC) -0.1 0.4 0.2 TO-92 PD = 1W TC = 25°C 0.01 0.1 1 10 T C = 25 ° C -0.01 -0.1 -1.0 -10 -100 0 0.001 VDS (volts) tp (seconds) 3 VP0104/VP0106/VP0109 Typical Performance Curves BVDSS Variation with Temperature 1.10 50 On-Resistance vs. Drain Current 1.06 40 VGS = -5V VGS = -10V BVDSS (normalized) RDS(ON) (ohms) 1.02 30 0.98 20 0.94 10 0.90 -50 0 50 100 150 0 0 -0.3 -0.6 -0.9 -1.2 -1.5 Tj (°C) Transfer Characteristics -1.0 1.6 ID (amperes) V(th) and RDS Variation with Temperature 1.6 TA = -55°C -0.8 VDS = -25V TA = 25°C RDS(ON) @ -10V, -0.5A 1.4 VGS(th) (normalized) RDS(ON) @ -5V, 0.1A 1.2 1.4 -0.6 V(th) @ -1.0mA 1.0 1.2 -0.4 TA = 125°C 1.0 0.8 0.8 -0.2 0 0 -2 -4 -6 -8 -10 0.6 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz -8 75 VDS = -10V C (picofarads) 70 pF VGS (volts) VDS = -40V 70 pF -6 50 CISS -4 25 COSS -2 CRSS 0 0 -10 -20 -30 -40 0 0 45pF 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) 07/08/02 ID (amperes)
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