VP0120ND

– LETE VP0120 – OBSO P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -200V †MIL visual screening available RDS(ON) (max) 25Ω ID(ON) (min) -100mA Order Number / Package TO-92 VP0120N3 Die† VP0120ND 7 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features ■ Free from secondary breakdown ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability ■ Integral Source-Drain diode ■ High input impedance and high gain ■ Complementary N- and P-channel devices 9 Applications ■ Motor controls ■ Converters ■ Amplifiers ■ Switches ■ Power supply circuits ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-223 BVDSS BVDGS ± 20V -55°C to +150°C 300°C SGD TO-92 Note: See Package Outline section for dimensions. VP0120 Thermal Characteristics Package TO-92 ID (continuous)* -0.1A ID (pulsed) -0.35A Power Dissipation @ TC = 25°C 1.0W θjc θja IDR* -0.1A IDRM -0.35A °C/W 125 °C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -200 -1.5 6.0 -100 -10 -1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 50 -100 -350 -400 -750 25 15 0.6 70 50 10 5 4 4 4 4 -1.0 500 60 30 10 10 10 10 11 V ns ISD = -0.5A, VGS = 0V ISD = -0.5A, VGS = 0V ns VDD = -25V ID = -350mA RGEN = 25Ω pF 40 25 Ω %/°C m -3.5 Typ Max Unit V V mV/°C nA µA mA mA Conditions ID = -1.0mA, VGS = 0V VGS = VDS, ID = -1.0mA ID = -1.0mA, VGS = VDS VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -50mA VGS = -10V, ID = -100mA VGS = -10V, ID = -100mA VDS = -25V, ID = -100mA VGS = 0V, VDS = -25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. LETE – OBSO – Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 7-224 Ω D.U.T. OUTPUT RL VDD Typical Performance Curves Output Characteristics -1.0 VGS = -10V -8V -0.8 LETE – OBSO – -0.5 -0.4 -8V VP0120 Saturation Characteristics VGS = -10V ID (amperes) -0.6 -6V ID (amperes) -0.3 -6V -0.4 -0.2 -4V -0.2 -4V -0.1 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10 VDS (volts) Transconductance vs. Drain Current 140 25 VDS (volts) Power Dissipation vs. Case Temperature 7 VDS = -25V 120 20 GFS (millisiemens) 9 PD (watts) 100 TA = -55°C 15 80 TA = 25° C 10 60 TA = 125°C 5 TO-92 40 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 T C = 25 ° C TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) -1.0 0.6 0.4 -0.1 TO-92 (DC) 0.2 TO-92 PD = 1W TC = 25°C 0.01 0.1 1 10 -0.01 0 -10 -100 -1000 0 0.001 VDS (volts) tp (seconds) 7-225 Typical Performance Curves BVDSS Variation with Temperature 1.10 LETE – OBSO – 100 80 VP0120 On-Resistance vs. Drain Current 1.06 VGS = -5V BVDSS (normalized) RDS(ON) (ohms) 1.02 60 VGS = -10V 40 0.98 0.94 20 0.90 -50 0 50 100 150 0 0 -0.3 -0.6 -0.9 -1.2 -1.5 Tj (°C) Transfer Characteristics -1.0 1.25 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = -25V -0.8 TA = -55°C RDS(ON) @ -10V, -100mA 1.6 ID (amperes) TA = 25°C -0.6 VGS(th) (normalized) 1.2 1.0 RDS(ON) @ -5V, -50mA 0.8 -0.4 TA = 125°C -0.2 V(th) @ -1.0mA 0.4 0 0 -2 -4 -6 -8 -10 0.75 -50 0 50 100 0 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 80 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz -8 60 VDS = -10V C (picofarads) VGS (volts) CISS 40 100 pF -6 VDS = -40V -4 100 pF -2 20 COSS CRSS 0 0 -10 -20 -30 -40 0 0 50pF 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 7-226 RDS(ON) (normalized)