VP0350N1

– Ordering Information BVDSS / BVDGS -500V † LETE – OBSO P-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package TO-3 VP0350N1 TO-220 VP0350N5 Die† VP0350ND ID(ON) (min) -1A VP0350 RDS(ON) (max) 7.5Ω MIL visual screening available High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Package Options Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) G S GD S Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 05/19/03 TO-3 Case: DRAIN BVDSS BVDGS ± 20V TO-220 TAB: DRAIN -55°C to +150°C 300°C Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP0350 Thermal Characteristics Package TO-3 TO-220 ID (continuous)* -1.5A -1.0A ID (pulsed) -3.0A -3.0A Power Dissipation @ TC = 25°C 100W 50W θjc θja IDR* -1.5A -1.0A IDRM -3.0A -3.0A °C/W 1.25 2.5 °C/W 30 40 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -500 -2.5 4.8 -4.5 6.0 -100 -200 -2 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -1.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.25 -1.5 -3.0 6.0 5.5 0.7 0.45 720 110 20 11 11 70 22 -1.0 550 800 130 50 30 30 100 30 -1.3 V ns ns pF 7.5 1.2 Ω %/°C Typ Max Unit V V mV/°C nA µA mA A ETE – OBSOL – Conditions VGS= 0V, ID =-10mA VGS = VDS, ID = -10mA VGS = VDS, ID = -10mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -0.25A VGS = -10V, ID = -0.25A VGS = -10V, ID = -0.25A VDS = -25V, ID = -0.5A VGS = 0V, VDS = -25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω VDD = -25V ID = -1A RGEN = 10Ω VGS = 0V, ISD = -0.25A VGS = 0V, ISD = -0.25A D.U.T. OUTPUT RL VDD Typical Performance Curves Output Characteristics -5 ETE – OBSOL – -2.0 -8V -1.6 VP0350 Saturation Characteristics -4 VGS = -10V -7V VGS = -10V -8V -6V -5V ID (amperes) ID (amperes) -3 -6V -2 -5V -1.2 -0.8 -4V -1 -4V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10 -0.4 VDS (volts) Transconductance vs. Drain Current 1.0 100 TO-3 0.8 VDS (volts) Power Dissipation vs. Case Temperature VDS = -25V 80 GFS (siemens) PD (watts) 0.6 TA = -55°C TA = 25°C 60 TO-220 0.4 TA = 150°C 40 0.2 20 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 TO-220 (pulsed) TO-3 (DC) 1.0 TC (°C) Thermal Response Characteristics TO-220 P D = 50W 0.8 Thermal Resistance (normalized) T C = 2 5 °C ID (amperes) -1 TO-220 (DC) 0.6 TO-3 PD = 1 00W TC = 2 5 °C 0.4 -0.1 0.2 T C = 25 ° C -0.01 -1 -10 -100 -1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 Typical Performance Curves BVDSS Variation with Temperature 1.15 LETE – OBSO – On-Resistance vs. Drain Current 20 16 VP0350 1.1 VGS = -5V VGS = -10V BVDSS (normalized) RDS(ON) (ohms) -50 0 50 100 150 1.05 12 1.0 8 0.95 4 0.9 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 Tj (°C) Transfer Characteristics -5.0 1.2 ID (amperes) V(th) and RDS Variation with Temperature 2.0 RDS(ON) @ -10V, -0.25A VDS = -25V -4.0 -55 °C 1.1 -3.0 -2.0 TA = C 0° 15 1.0 1.0 0.9 -1.0 0.8 V(th) @ -10mA 0 0 -2 -4 -6 -8 -10 0 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 800 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz CISS 600 -8 VDS = -10V C (picofarads) VGS (volts) -6 800 pF 400 VDS = -40V -4 200 COSS CRSS -2 500 pF 0 -30 -40 0 2 4 6 8 10 0 0 -10 -20 VDS (volts) QG (nanocoulombs) 05/19/03 ©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 222-8888 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) 25 °C VGS(th) (normalized) A= ID (amperes) T A= T