VP0540

VP0535 LETE – BSO –O VP0540 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -350V -400V † RDS(ON) (max) 75Ω 75Ω ID(ON) (min) -200mA -200mA Order Number / Package TO-39 VP0535N2 — TO-92 VP0535N3 VP0540N3 Die† VP0535ND VP0540ND MIL visual screening available 7 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features ■ Free from secondary breakdown ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability ■ Integral Source-Drain diode ■ High input impedance and high gain ■ Complementary N- and P-channel devices 9 Package Options Applications ■ Motor controls ■ Converters ■ Amplifiers ■ Switches ■ Power supply circuits ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-237 BVDSS BVDGS ± 20V -55°C to +150°C 300°C DGS SGD TO-39 Case: DRAIN TO-92 Note: See Package Outline section for dimensions. VP0535/VP0540 Thermal Characteristics Package TO-39 TO-92 ID (continuous)* -0.2A -0.1A ID (pulsed) -0.5A -0.5A Power Dissipation @ TC = 25°C 3.5W 1.0W θjc θja IDR* -0.2A -0.1A IDRM -0.5A -0.5A °C/W 35 125 °C/W 125 170 LETE – SO Electrical Characteristics – OB * ID (continuous) is limited by max rated Tj. Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VP0540 VP0535 Min -400 -350 -2.5 3.5 -4.5 6.0 -100 -10 -500 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -200 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time -0.8 200 50 -80 -350 60 45 0.8 70 40 11 3 60 20 5 10 10 15 15 -1.5 V ns ns VDD = -25V ID = -200mA RGEN = 25Ω pF 75 1.5 Ω %/°C m µA mA V mV/°C nA Typ Max Unit V Conditions VGS= 0V, ID =-1mA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -10mA VGS = -10V, ID = -50mA VGS = -10V, ID = -50mA VDS = -25V, ID = -50mA VGS = 0V, VDS = -25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 7-238 Ω VGS = 0V, ISD = -0.1A VGS = 0V, ISD = -0.1A D.U.T. OUTPUT RL VDD Typical Performance Curves Output Characteristics -0.5 LETE – – OBSO -0.2 VP0535/VP0540 Saturation Characteristics VGS = -10V -8V VGS = -10V -0.4 ID (amperes) -0.3 ID (amperes) -8V -6V -0.1 -0.2 -6V -0.1 -4V -4V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10 7 VDS (volts) Transconductance vs. Drain Current 100 VDS (volts) Power Dissipation vs. Case Temperature 5 VDS = -25V TA = -55°C 4 TO-39 GFS (millisiemens) 9 TA = 25°C 50 PD (watts) 3 2 TA = 150°C 1 TO-92 0 0 -0.15 -0.3 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -1.0 TO-39 (pulsed) 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 TO-39(DC) ID (amperes) -0.1 TO-92(DC) 0.6 TO-39 P D = 3.5W T C = 2 5 °C 0.4 -0.01 0.2 TO-92 PD = 1W TC = 25°C 0.01 0.1 1.0 10 -0.001 -1 T C = 25 ° C -10 -100 -1000 0 0.001 VDS (volts) tp (seconds) 7-239 Typical Performance Curves BVDSS Variation with Temperature 1.15 LETE – – OBSO On-Resistance vs. Drain Current 120 100 VP0535/VP0540 VGS = -5V 1.10 BVDSS (normalized) RDS(ON) (ohms) 1.05 80 VGS = -10V 1.00 60 0.95 40 0.90 -50 0 50 100 150 20 0 -0.1 -0.2 -0.3 -0.4 -0.5 Tj (°C) Transfer Characteristics -4.0 1.1 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = -25V TA = -55°C RDS(ON) @ -10V, -50mA -2.0 TA = 25°C 1.0 1.0 TA = 125°C V(th) @ -1mA 0 0 -2 -4 -6 -8 -10 0.9 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 80 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz -8 60 VDS = -10V C (picofarads) VGS (volts) CISS 40 -6 VDS = -40V -4 150 pF 32pF -2 20 COSS CRSS 0 0 -10 -20 -30 -40 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 7-240 RDS(ON) (normalized) VGS(th) (normalized) ID (amperes)