VP2110ND

VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -60V -100V † RDS(ON) (max) 12Ω 12Ω ID(ON) (min) -0.5A -0.5A Order Number / Package TO-92 VP2106N3 — TO-236AB* — VP2110K1 Die† — VP2110ND Product marking for SOT-23: P1A❋ where ❋ = 2-week alpha date code MIL visual screening available. *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) D Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C GS SGD TO-236AB (SOT-23) top view TO-92 Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP2106/VP2110 Thermal Characteristics Package TO-236AB TO-92 ID (continuous)* -120mA -0.25A ID (pulsed) -400mA -0.8A Power Dissipation @ TA = 25°C 0.36W 0.74W θjc θja IDR* -120mA -0.25A IDRM -400mA -0.8A °C/W 200 125 °C/W 350 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VP2110 VP2106 Min -100 -60 -1.5 5.8 -1.0 -3.5 6.5 -100 -10 -1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Typ Max Unit V V mV/°C nA µA mA A Conditions ID = -1.0mA, VGS = 0V VGS = VDS, ID = -1.0mA ID = -1.0mA, VGS = VDS VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -10V, VDS = -25V VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -25V, ID = -0.5A VGS = 0V, VDS = -25V f = 1 MHz VGS(th) ∆V GS(th) IGSS IDSS ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time -0.50 -1.0 11 9.0 0.55 15 12 1.0 Ω %/°C m 150 200 45 22 3 4 5 5 4 -1.2 400 60 30 8 5 8 9 8 -2.0 pF ns V ns Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω VDD = -25V ID = -0.5A RGEN = 25Ω ISD = -0.5A, VGS = 0V ISD = -0.5A, VGS = 0V D.U.T. OUTPUT RL VDD VP2106/VP2110 Typical Performance Curves Output Characteristics -2.0 -1.0 Saturation Characteristics VGS = -10V -1.6 -0.8 -9V ID (amperes) -1.2 ID (amperes) -8V VGS = -10V -9V -8V -7V -0.6 -7V -0.8 -0.4 -6V -5V -4V -0.4 -6V -5V -0.2 0 0 -10 -20 -30 -4V -0 -50 0 -2 -4 -6 -3V -40 -8 -10 VDS (volts) Transconductance vs. Drain Current 250 VDS = 25V 200 1.0 VDS (volts) Power Dissipation vs. Ambient Temperature TA= -55°C TO-92 GFS (millisiemens) TA = 25°C PD (watts) 150 0.5 TO-236AB 100 TA = 125°C 50 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -1.0 TO-92 (pulsed) 1.0 TA (°C) Thermal Response Characteristics Thermal Resistance (normalized) TO-236AB (pulsed) TO-92 (DC) 0.8 TO-236AB P D = 0.36W T A = 2 5 °C ID (amperes) -0.1 TO-236AB (DC) 0.6 0.4 -0.01 0.2 TO-92 P D = 1.0W T A = 2 5 °C -0.001 -0.1 TA = 25°C -1.0 -10 -100 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 3 VP2106/VP2110 Typical Performance Curves BVDSS Variation with Temperature -1.1 20 On-Resistance vs. Drain Current 16 BVDSS (normalized) VGS = -5V RDS(ON) (ohms) 12 -1.0 8 VGS = -10V 4 -0.9 -50 0 50 100 150 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Tj (°C) Transfer Characteristics -1.0 ID (amperes) V(th) and RDS Variation with Temperature 2.0 1.4 VDS = -25V -0.8 TA = -55°C RDS(ON) @ -10V, 0.5A 1.6 1.2 1.2 1.0 0.8 0.8 -0.6 25°C -0.4 125°C -0.2 V(th)@ 1mA 0.6 0.4 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz VDS = -10V -8 75 C (picofarads) VGS (volts) VDS = -40V -6 101 pF -4 50 CISS 25 COSS CRSS 0 0 -10 -20 -30 -40 -2 35 pF 0 0 1.0 2.0 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) ID (amperes)