VP2206N3

VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -60V † RDS(ON) (max) 0.9Ω ID(ON) (min) -4A Order Number / Package TO-39 VP2206N2 TO-92 VP2206N3 MIL visual screening available High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Package Options Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C DGS SGD TO-39 Case: DRAIN TO-92 Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP2206 Thermal Characteristics Package TO-39 TO-92 * ID (continuous)* -0.75A -0.64A ID (pulsed) -8.0A -4.0A Power Dissipation @ TC = 25°C 6.0W 1.0W θjc °C/W 20.8 125 θja °C/W 125 170 IDR* -0.75A -0.64A IDRM -8.0A -4.0A ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -60 -1.0 -4.3 -1 -3.5 -5.5 -100 -50 -10 ID(ON) ON-State Drain Current -0.85 -4 RDS(ON) Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 -2 -9 1.3 0.75 0.85 1.4 325 125 30 4 16 16 22 -1.1 500 450 180 40 15 25 50 50 -1.6 V ns VGS = 0V, ISD = -3.5A VGS = 0V, ISD = -1A VDD = -25V ns ID = -4A RGEN = 10Ω pF VGS = 0V, VDS = -25V f = 1 MHz 1.5 0.9 1.2 Ω %/°C Typ Max Unit V V mV/°C nA µA mA Conditions VGS = 0V, ID = -10mA VGS = VDS, ID = -10mA VGS = VDS, ID = -10mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS =- 25V VGS = -5V, ID = -1A VGS = -10V, ID = -3.5A VGS = -10V, ID = -3.5A VDS = -25V, ID = -2A A ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω D.U.T. OUTPUT RL VDD VP2206 Typical Performance Curves Output Characteristics -10 VGS = -10V -8 -8 -10 VGS = -10V Saturation Characteristics ID (amperes) ID (amperes) -8V -6 -6 -8V -4 -4 -6V -2 -6V -2 -4V -0 0 -10 -20 -30 -4V -0 -50 0 -2 -4 -6 -3V -40 -3V -8 -10 VDS (volts) Transconductance vs. Drain Current 2 10 VDS (volts) Power Dissipation vs. Case Temperature VDS = -25V TA= -55°C 8 GFS (siemens) 1 PD (watts) TA = 25°C TA = 125°C 6 TO-39 4 2 TO-92 0 0 -5 -10 0 25 50 75 100 125 150 0 ID (amperes) Maximum Rated Safe Operating Area -10 TO-39 (pulsed) 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) TO-92 (pulsed) TO-39 (DC) 0.8 ID (amperes) -1.0 0.6 TO-39 P D = 6.0W T C = 2 5 °C 0.4 -0.1 TO-92 (DC) 0.2 TO-92 P D = 1.0W T C = 2 5 °C -0.01 -1 T C = 25 ° C -10 -100 -1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 VP2206 Typical Performance Curves BVDSS Variation with Temperature 5 1.1 4 On-Resistance vs. Drain Current VGS = -5V BVDSS (normalized) RDS(ON) (ohms) 3 1.0 2 VGS = -10V 1 0.9 0 -50 0 50 100 150 0 -2 -4 -6 -8 -10 Tj (°C) Transfer Characteristics -10 1.2 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = -25V -8 RDS(ON) @ -10V, -3.5A TA = -55°C 1.1 1.6 -6 25°C 1.0 1.2 -4 125°C 0.9 0.8 V(th)@ -1mA 0.8 0.4 -2 0 0 -2 -4 -6 -8 -10 0.7 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 400 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz CISS 300 -8 VDS = -10V C (picofarads) VGS (volts) -6 VDS = -40V 725 pF 200 -4 COSS 100 -2 CRSS 0 0 -10 -20 -30 -40 0 0 310 pF 2 4 6 8 10 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) ID (amperes)