VP2450N3

VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -500V RDS(ON) (max) 30Ω ID(ON) (min) -0.2A Order Number / Package TO-92 VP2450N3 TO-243AA* VP2450N8 Die VP2450ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Product marking for TO-243AA: VP4E❋ Where ❋ = 2-week alpha date code Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C SGD D G D S TO-92 TO-243AA (SOT-89) Note: See Package Outline section for dimensions. 07/08/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP2450 Thermal Characteristics Package TO-92 TO-243AA * † ID (continuous)* -0.1A -0.16A ID (pulsed) -0.3A -0.80A Power Dissipation @ TC = 25°C 1W 1.6W † θjc θja IDR* -0.1A -0.16A IDRM -0.3A -0.80A °C/W 125 15 °C/W 170 78 ID (continuous) is limited by max rated Tj. Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -500 -1.5 -3.5 -4.8 -100 -10 -1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 150 320 190 75 20 10 25 45 25 -1.8 V ns VGS = 0V, ISD = -100mA VGS = 0V, ISD = -100mA ns VDD = -25V ID = -200mA RGEN = 25Ω pF VGS = 0V, VDS =- 25V f = 1 MHz -75 -200 35 30 0.75 %/°C m Ω Typ Max Unit V V mV/°C nA µA mA mA Conditions VGS = 0V, ID = -250µA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -4.5V, VDS = -15V VGS = -10V, VDS = -15V VGS = -4.5V, ID = -50mA VGS = -10V, ID = -100mA VGS = -10V, ID = -100mA VDS = -15V, ID = -100mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω D.U.T. OUTPUT RL VDD VP2450 Typical Performance Curves Output Characteristics -1.0 -0.6 Saturation Characteristics VGS=-10V VGS = -10V VGS=-4.5V -0.8 VGS=-6.0V VGS = -6.0V -0.5 ID (Amperes) ID (Amperes) -0.4 -0.6 VGS=-3.5V VGS = -4.5V -0.3 VGS = -3.5V -0.2 -0.4 -0.2 -0.1 0.0 0 -10 -20 -30 -40 -50 0.0 0 -2 -4 -6 -8 -10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current 1.0 V =-20V 2.0 Power Dissipation vs. Ambient Temperature DS TO-243AA 0.8 GFS (Siemens) T A =-55¡C 1.5 0.6 T A =25¡C PD (Watts) 1.0 TO-92 T 0.4 A =125¡C 0.5 0.2 0.0 0 -100 -200 -300 -400 -500 0.0 0 25 50 75 100 125 150 ID (Milliamperes) TA (¡C) Maximum Rated Safe Operating Area -1.0 1.0 Thermal Response Characteristics TO-92 (pulsed) Thermal Resistance (normalized) TO-243AA (pulsed) 0.8 TO-243AA (DC) ID (amperes) -0.1 TO-243AA TA = 2 5 C PD = 1 . 6 W TO-92 (DC) 0.6 ° 0.4 -0.01 0.2 TO-92 PD = 1W T -0.001 -1 A =25¡C 0 -10 -100 -1000 0.001 0.01 0.1 TC = 25 C 1 10 ° VDS (Volts) tp (seconds) 3 VP2450 Typical Performance Curves BVDSS Variation with Temperature 1.2 80 On Resistance vs. Drain Current BVDSS (Normalized) RDS(ON) (ohms) 1.1 60 1.0 40 VGS = -4.5V 0.9 20 VGS = -10V 0.8 -50 0 50 100 150 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 TJ (°C) Transfer Characteristics -1.2 VDS = -20V -1.0 TA = 25°C -0.8 TA = -55°C ID (Amperes) VGS(th) and RDS(on) Variation w/ Temperature 1.5 2.2 1.3 1.8 VTH @ -1mA 1.1 1.4 -0.6 -0.4 TA = 125°C -0.2 0.9 1.0 0.7 0 0 -1 -2 -3 -4 -50 RDS(on) @ -10V, -0.1A 0.6 0 50 100 150 VGS (Volts) TJ (°C) Gate Drive Dynamic Characteristics -10 ID = -100mA -8 VDS=-20V Capacitance vs. Drain Source Voltage 400 f = 1MHz 300 C (picofarads) VDS=-40V VGS (volts) -6 200 -4 CISS 100 -2 COSS 0 0 -10 -20 -30 -40 0.0 1.0 2.0 3.0 CRSS 0 VDS (volts) QG (nanocoulombs) ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) ID (Amperes) 07/08/02