VP3203

VP3203 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -30V † RDS(ON) (max) 0.6Ω ID(ON) (min) -4.0A TO-92 Order Number / Package TO-243AA* VP3203N8 Die† VP3203ND VP3203N3 *Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA: Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices VP2L❋ Where ❋ = 2-week alpha date code Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. D G D S SGD BVDSS BVDGS ± 20V -55°C to +150°C 300°C TO-92 TO-243AA (SOT-89) Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VP3203 Thermal Characteristics Package TO-92 TO-243AA * † ID (continuous)* -0.65A -1.1A ID (pulsed) -4.0A -4.0A Power Dissipation @ TA = 25°C 0.74W 1.6W † θjc °C/W 125 15 θja °C/W 170 78 † IDR* -0.65A -1.1A IDRM -4.0A -4.0A ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current -1.0 Min -30 -1.0 -3.5 -5.5 -100 -10 -1 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance TO-92 SOT-89 TO-92 SOT-89 ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 1.0 2.0 200 100 45 300 120 60 10 15 25 25 -1.6 V ns VGS = 0V, ISD = -1.5A VGS = 0V, ISD = -1A ns VDD = -25V ID = -2A RGEN = 10Ω pF VGS = 0V, VDS = -25V f = 1 MHz -14 1.0 1.0 0.6 0.6 1.0 Typ Max Unit V V mV/°C nA µA mA A Ω Ω Ω Ω %/°C Conditions VGS = 0V, ID = -10mA VGS = VDS, ID = -10mA VGS = VDS, ID = -10mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -10V, VDS = -5V VGS = -4.5V, ID = -1.5A VGS = -4.5V, ID = -0.75A VGS = -10V, ID = -3A VGS = -10V, ID = -1.5A VGS = -10V, ID = -1.5A VDS = -25V, ID = -2A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω D.U.T. OUTPUT RL VDD VP3203 Typical Performance Curves Output Characteristics -20 -20 Saturation Characteristics -16 VGS = -10V -16 VGS = -10V ID (amperes) -12 ID (amperes) -8V -12 -8V -8 -8 -6V -4 -4 -6V 0 0 -5 -10 -15 -20 -4V -3V -25 -30 -4V 0 0 -2 -4 -6 -3V -8 -10 VDS (volts) Transconductance vs. Drain Current 5 2.0 VDS (volts) Power Dissipation vs. Temperature VDS = -25V 4 1.6 TO-243AA GFS (siemens) TA = 25°C 2 PD (watts) 3 TA = 125°C 1.2 0.8 TO-92 TA = -55°C 1 0.4 0 0 -1 -2 -3 -4 -5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 TA (°C) Thermal Response Characteristics Thermal Resistance (normalized) TO-243AA (pulsed) TO-92 (pulsed) TO-243AA(DC) 0.8 ID (amperes) -1.0 TO-243AA 0.6 TO-92 (DC) TA = 2 5 °C PD = 1 .6W 0.4 -0.1 TA = 25° C -0.01 -0.1 0.2 TO-92 PD = 1W TC = 25°C 0.01 0.1 1.0 10 -1.0 -10 -100 0 0.001 VDS (volts) tp (seconds) 3 VP3203 Typical Performance Curves BVDSS Variation with Temperature 2.0 1.1 1.6 On-Resistance vs. Drain Current BVDSS (normalized) VGS = -5V RDS(ON) (ohms) 1.2 VGS = -10V 0.8 1.0 0.4 0.9 0 -50 0 50 100 150 0 -4 -8 -12 -16 -20 Tj (°C) Transfer Characteristics -10 1.4 ID (amperes) V(th) and RDS Variation with Temperature 1.4 TA = -55°C -8 RDS(ON) @ -10V, -3A 25°C 1.2 1.2 -6 VDS = -25V 125°C 1.0 1.0 -4 0.8 0.8 -2 0.6 0 0 -2 -4 -6 -8 -10 -50 0 50 V(th) @ -10mA 0.6 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 300 -10 Tj (°C) Gate Drive Dynamic Characteristics f = 1MHz -8 225 C (picofarads) CISS VDS = -10V VGS (volts) -6 150 VDS = -20V -4 335pF COSS 75 -2 CRSS 0 -0 -10 -20 -30 0 0 200 pF 1 2 3 4 5 VDS (volts) QG (nanocoulombs) ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) 11/12/01 VGS(th) (normalized) ID (amperes)