1N4148

1N4148 SMALL SIGNAL SWITCHING DIODE DO-34(GLASS) DO-35(GLASS) FEATURES Silicon epitaxial planar diode Switching diodes 500mw power dissipation High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 2(26.0) MIN. 0.079(2.0) MAX 0.079(2.0) MAX 1.0 2(26.0) MIN. 0.106 (2.9) MAX 0.165 (4.2) MAX MECHANICAL DATA 1.0 2(26.0) MIN. 0.017(0.42) TYP 0.020(0.52) TYP 1.0 2(26.0) MIN. Case: DO-34\DO-35 glass sealed envelope. Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.003 ounce, 0.09 grams(DO-34) 0.005 ounce, 0.14 grams(DO-35) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS VRRM VRMS I(AV) 1N4148 100 75 150 UNITS VOLTS VOLTS mAmps CJ Operating junction and storage temperature range TJ,TSTG NOTES: 1.Test condition:IF=10mA,IR=10mA,Irr=1mA,VR=6V,RL=100W. 2.Measured at 1.0 MHz and applied reverse voltage of 4.0 volts Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=25 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 10mA Maximum DC reverse current TA=25 C VR=75V at rated DC blocking voltage TA=100 C VR=20V Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) IFSM VF IR trr 500 1.0 5.0 50 4.0 4.0 -65 to +200 mAmps Volts uA ns pF C www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES 1N4148 FIG. 1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 800 700 600 500 400 300 200 100 0 0 100 200 C FIG. 2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE (TYPICAL VALUES) 1 P,POWER DISSIPATION,MILLIWATTS 0.1 0.01 0.001 TJ=25 C AMBIENT TEMPERATURE, C 0.0001 40 60 80 100 120 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 3-FORWARD CHARACTERISTICS 16 INSTANTANEOUS FORWARD CURRENT,MILLIAMPERES FIG. 4-RELATIVE CAPACTANCE VERSUS REVERSE VOLTAGE Ctot(vR) RELATIVE CAPACTANCE Ctot(0v) 14 12 10 8 6 4 2 0 0 1 2V 1.2 1.0 0.8 0.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS 0.4 0 5 10V REVERSE VOLTAGE,VOLTS. FIG. 5-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION IFRM,PEAK FORWARD CURRENT,AMPERES 100 n=tp/T V=tp/T T=1/fp tp 10 IFRM n=0 0.1 0.2 T 1 0.5 0.1 0.01 0.1 1 10 100 1000ms tp,PULSE DURATION,ms www.shunyegroup.com