1N4148WT

1N4148WT Switching Diodes SOD-523 Ƶ Features ƽ Fast Switching Speed ƽ For General Purpose Switching Applications. ƽ High Conductance ƽ Surface Mount Package Ideally Suited for Automatic Insertion Ƶ Marking :T4 Dimensions in inches and (millimeters) Ƶ Absolute Maximum Ratings Ta = 25ć Symbol Rating Reverse Voltage Parameter VRM 100 Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage 100 Unit V VR RMS Reverse Voltage VR(RMS) 71 Average Rectified Output Current IO 150 Forward Continuous Current IFM 300 Peak Forward Surge Current @ t=1us 2 IFSM @ t =1s mA A 1 Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Pd 150 mW R©JA 833 ć/W TJ 150 Tstg -55 to 150 ć Ƶ Electrical Characteristics Ta = 25ć Parameter Reverse breakdown voltage Symbol Test Conditions Min Typ Max Unit VR IR= 100 uA VF1 IF= 1mA 0.715 VF2 IF= 10 mA 0.855 VF3 IF= 50 mA 1 VF4 IF= 150 mA 1.25 IR1 VR= 75 V 1 uA IR2 VR=20 V 25 nA Junction capacitance Cj VR= 0 V, f= 1 MHz 2 pF Reverse recovery time trr IF=IR=10mA,Irr=0.1xIR, RL=100ȍ 4 ns Forward voltage Reverse voltage leakage current www.shunyegroup.com.cn 100 V 1/2 1N4148WT Switching Diodes Ƶ Typical Characterisitics Forward (mA) 1000 Characteristics REVERSE CURRENT IR C o FORWARD CURRENT Ta =2 5 Ta =1 00 o IF C (nA) 100 10 1 0.1 0.01 0.0 Reverse 10000 o Ta=100 C 1000 100 o Ta=25 C 10 1 0.4 0.8 1.2 FORWARD VOLTAGE VF 1.6 0 20 (V) 40 60 REVERSE VOLTAGE 80 VR 100 (V) Power Derating Curve Capacitance Characteristics 1.6 200 Ta=25 f=1MHz 150 PD (mW) 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Characteristics 1.0 0.8 0.6 100 50 0 0 4 8 12 REVERSE VOLTAGE www.shunyegroup.com.cn 16 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 Ta (ć ) 2/2