1N4448WS

1N4448WS FAST SWITCHING DIODES SOD-323 1.35(0.053) 1.15(0.045) 1.26(.050) 1.24(.048) FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance 2.70(0.106) 2.30(0.091) 1.80(0.071) 1.60(0.063) 2.70(0.106) 2.30(0.091) 1.80(0.071) 1.60(0.063) MECHANICAL DATA 0.4(0.016) .25(0.010) .177(.007) .089(.003) 1.00(.040) 0.80(.031) 0.1(0.004) MIN .305(0.012) .295(0.010) .72(0.028) .69(0.027) .08(.003) MIN Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: T5 Dimensions in millimeters and (inches) Maximum ratings and electrical characteristics, Single diode @TA=25C PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Forward continuous current Average rectified output current Peak forward surge current @=1.0us @=1.0s Power dissipation Thermal resistance junction to ambient Storage temperature Non-Repetitive peak reverse voltage Electrical ratings @TA=25C PARAMETER Reverse brdakdown voltage Forward voltage SYMBOLS SYMBOLS Limits 75 53 500 250 4.0 2.0 200 315 -65 to +150 100 UNITS V V mA mA A mW K/W C V VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RΘJA TSTG VRM Min. 75 0.62 Typ. Max. 0.72 0.855 1.0 1.25 2.5 25 4 4 Unit V V V V V Reverse current Capacitance between terminals Reverse recovery time V(BR)R VF1 VF2 VF3 VF4 IR1 IR2 CT trr uA nA pF ns Conditions IR=10uA IF=5mA IF=10mA IF=100mA IF=150mA VR=75V VR=20V VR=0V,f=1.0MHz IF=IR=10mA Irr=0.1XIR,RL=100 www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES 1N4448WS FIG. 1- POWER DERATING CURVE 600 100 FIG. 2-TYPICAL FORWARD CHARACTERISTICS P d.POWER DISSIPATION(mW) 500 IF, FORWARD CURRENT(mA) TA=25 C 10 TA=50 C 400 300 200 1.0 T A=85 C TA=0 C 100 TA =-30 C 0 0 0.1 25 50 75 100 125 150 0 200 400 600 800 1000 TA,AMBIENT TEMPERATURE(*) VF INSTANTANEOUS FORWARD VOLTAGE (mV) FIG. 3- TYPICAL REVERSE CHARACTERISTICS Trr, REVEERSE RECOVERY TIME (nS) 10 2.5 FIG. 4- REVERSE RECOVERY TIME VS FORWARD CURRENT IR,REVERSE CURRENT(uA) 1.0 TA=100 C 2.0 TA=75 C 0.1 TA=50 C TA=25 C 0.01 TA=-30 C TA=0 C 1.5 1.0 0.5 0.001 0 0 20 40 60 80 0 2 4 6 8 10 VR, REVERSE VOLTAGE (V) VR, FORWARD CURRENT (mA) FIG. 5- TOTAL CAPACITANCE VS REVERSE VOLTAGE 4 CT.TOTAL CAPACITANCE (pF) f=1MHz 3 2 1 0 0 1 2 3 4 5 6 VR,REVERSE VOLTAGE (V) www.shunyegroup.com