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1N5393

1N5393

  • 厂商:

    SY(顺烨)

  • 封装:

  • 描述:

    1N5393 - GENERAL PURPOSE SILICON RECTIFIER - Changzhou Shunye Electronics Co.,Ltd.

  • 数据手册
  • 价格&库存
1N5393 数据手册
1N5391 THRU 1N5399 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts DO-15 Forward Current - 1.5Amperes FEATURES 1.0 (25.4) MIN. 0.140 (3.6) 0.104(2.6) DIA. 0.300(7.6) 0.230(5.8) The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension MECHANICAL DATA 1.0 (25.4) MIN. 0.034 (0.90) 0.028 (0.70) DIA. Dimensions in inches and (millimeters) Case: JEDEC DO-15 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.014 ounce, 0.40 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS 1N 1N 1N 1N 1N 1N 5391 5392 5393 5394 5395 5396 1N 1N 1N 5397 5398 5399 UNITS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.5A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range VRRM VRMS VDC I(AV) 50 35 50 100 200 300 400 500 70 140 210 280 350 100 200 300 400 500 1.5 600 800 1000 VOLTS 420 560 700 VOLTS 600 800 1000 VOLTS Amps IFSM VF IR CJ RqJA TJ,TSTG 50.0 1.4 5.0 50.0 20.0 50.0 -65 to +175 Amps Volts uA pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES 1N5391 THRU 1N5399 AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE £PEAK FORWARD SURGE CURRENT, AMPERES 1.5 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 1.2 40 0.9 30 0.6 Single Phase Half Wave 60Hz Resistive or inductive Load 20 0.3 10 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 1,000 10 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 100 TJ=150 C 1 10 0.1 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE TJ=100 C 1 0.01 0.6 0.8 1.0 1.2 1.4 1.5 0.1 TJ=25 C 0.01 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLEAGE, VOLTS PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE 200 100 TJ=25 C FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W 100 JUNCTION CAPACITANCE, pF 10 10 1 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. www.shunyegroup.com
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