1N5399G

1N5399G

  • 厂商:

    SY(顺烨)

  • 封装:

  • 描述:

    1N5399G - GLASS PASSIVATED SILICON RECTIFIER - Changzhou Shunye Electronics Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5399G 数据手册
Reverse Voltage - 50 to 1000 Volts DO-15 GLASS PASSIVATED SILICON RECTIFIER FEATURES 1N5391G THRU 1N5399G Forward Current - 1.5Amperes 1.0 (25.4) MIN. 0.140 (3.6) 0.104(2.6) DIA. 0.300(7.6) 0.230(5.8) The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.70) DIA. MECHANICAL DATA Case: JEDEC DO-15 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.014 ounce, 0.40 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G 1N 1N 1N 1N 1N 1N 1N 1N 1N UNITS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.5A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ,TSTG 50 35 50 100 200 300 400 500 70 140 210 280 350 100 200 300 400 500 1.5 50.0 1.4 5.0 50.0 20.0 50.0 -65 to +175 600 800 1000 VOLTS 420 560 700 VOLTS 600 800 1000 VOLTS Amps Amps Volts µA pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES 1N5391G THRU 1N5399G AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE 1.5 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 1.2 40 0.9 30 0.6 Single Phase Half Wave 60Hz Resistive or inductive Load 20 0.3 10 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS FORWARD CURRENT,AMPERES 20 10 100 TJ=150 C 1 10 TJ=100 C 1 0.1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 0.01 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 JUNCTION CAPACITANCE, pF 200 100 TJ=25 C 10 10 1 0.1 1 0.01 0.1 1 10 100 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. www.shunyegroup.com
1N5399G
物料型号: - 1N5391G至1N5399G

器件简介: - 这些是玻璃钝化硅整流器,具有不同的反向电压等级(50至1000伏特)和正向电流(1.5安培)。

引脚分配: - 器件采用JEDEC DO-15模塑塑料体,带有镀层轴向引线,可按照MIL-STD-750方法2026进行焊接。

参数特性: - 最大重复峰值反向电压(VRRM):50至1000伏特不等。 - 最大RMS电压(VRMS):35至700伏特不等。 - 最大直流阻断电压(VDc):50至1000伏特不等。 - 最大平均正向整流电流(I(AV)):1.5安培。 - 0.375英寸(9.5毫米)引线长度在TA=75°C时的峰值正向浪涌电流(IFSM):50安培。 - 最大瞬时正向电压在1.5A时(VF):1.4伏特。 - 最大直流反向电流(IR):在TA=25°C和TA=100°C时,分别为5.0微安和50.0微安。 - 典型结电容(CJ):20.0皮法。 - 典型热阻(ROJA):50.0°C/W。 - 工作结和存储温度范围(TJ,TSTG):-65至+175°C。

功能详解: - 器件采用无空隙模塑塑料技术,具有低反向漏电流、高正向浪涌电流能力,并且保证在250°C下10秒内焊接,引线长度为0.375英寸(9.5毫米),张力为5磅(2.3千克)。

应用信息: - 这些整流器适用于需要高反向电压和高正向电流的应用场合。

封装信息: - 封装形式为JEDEC DO-15模塑塑料体,重量为0.014盎司或0.40克,尺寸以英寸和毫米给出。
1N5399G 价格&库存

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