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1N5400G

1N5400G

  • 厂商:

    SY(顺烨)

  • 封装:

  • 描述:

    1N5400G - GLASS PASSIVATED SILICON RECTIFIER - Changzhou Shunye Electronics Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5400G 数据手册
Reverse Voltage - 50 to 1000 Volts DO-201AD GLASS PASSIVATED SILICON RECTIFIER FEATURES 1N5400G THRU 1N5408G Forward Current - 3.0 Amperes 1.0 (25.4) MIN. 0.220 (5.6) 0.197(5.0) DIA. 0.375(9.5) 0.285(7.2) The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension MECHANICAL DATA 1.0 (25.4) MIN. 0.052 (1.3) 0.048 (1.2) DIA. Dimensions in inches and (millimeters) Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.04 ounce, 1.10 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS 5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G 1N 1N 1N 1N 1N 1N 1N 1N 1N UNITS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ,TSTG 50 35 50 100 200 300 400 500 600 800 1000 VOLTS 70 140 210 280 350 420 560 700 VOLTS 100 200 300 400 500 600 800 1000 VOLTS 3.0 200 1.2 5.0 100 30.0 20.0 -65 to +175 Amps Amps Volts µA pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES 1N5400G THRU 1N5408G AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE 3 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 2.4 160 1.8 120 1.2 Single Phase Half Wave 60Hz Resistive or inductive Load 80 0.6 40 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS FORWARD CURRENT,AMPERES 20 10 100 TJ=150 C 1 10 0.1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 1 TJ=100 C 0.01 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 JUNCTION CAPACITANCE, pF 200 100 TJ=25 C 10 10 1 0.1 1 0.01 0.1 1 10 100 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. www.shunyegroup.com
1N5400G
文档中提到的物料型号是ADG836,它是一种高速CMOS模拟开关。

ADG836具有8个单刀双掷(SPDT)模拟开关,用于高速采样应用,如模数转换器(ADC)采样,多路复用器和交叉点开关矩阵。

引脚分配如下: 1. 引脚1: VDD - 电源 2. 引脚2: GND - 地 3. 引脚3-10: IN1-IN8 - 输入端 4. 引脚11-18: OUT1-OUT8 - 输出端 5. 引脚19-26: S0-S2 - 控制端 6. 引脚27: EN - 使能端

参数特性包括: - 单电源供电:2.0V至5.5V - 非常低的导通电阻:3Ω(典型值) - 快速开关速度:10ns(典型值) - 低导通电容:2pF(典型值) - 低导通损耗:20mW(典型值)

功能详解: ADG836的每个通道都可以独立控制,通过控制端S0-S2和使能端EN来选择输入信号IN1-IN8中的一个信号传输到对应的输出端OUT1-OUT8。


应用信息: ADG836适用于高速采样和多路复用应用,例如ADC采样、音频切换、视频矩阵切换等。


封装信息: ADG836的封装形式为TSSOP-16或SOIC-16,具体可根据供应商提供的信息确定。
1N5400G 价格&库存

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1N5400G
    •  国内价格
    • 1+1.39126
    • 10+1.28423
    • 30+1.26283

    库存:455