1N5407G

1N5407G

  • 厂商:

    SY(顺烨)

  • 封装:

  • 描述:

    1N5407G - GLASS PASSIVATED SILICON RECTIFIER - Changzhou Shunye Electronics Co.,Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5407G 数据手册
Reverse Voltage - 50 to 1000 Volts DO-201AD GLASS PASSIVATED SILICON RECTIFIER FEATURES 1N5400G THRU 1N5408G Forward Current - 3.0 Amperes 1.0 (25.4) MIN. 0.220 (5.6) 0.197(5.0) DIA. 0.375(9.5) 0.285(7.2) The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension MECHANICAL DATA 1.0 (25.4) MIN. 0.052 (1.3) 0.048 (1.2) DIA. Dimensions in inches and (millimeters) Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.04 ounce, 1.10 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS 5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G 1N 1N 1N 1N 1N 1N 1N 1N 1N UNITS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ,TSTG 50 35 50 100 200 300 400 500 600 800 1000 VOLTS 70 140 210 280 350 420 560 700 VOLTS 100 200 300 400 500 600 800 1000 VOLTS 3.0 200 1.2 5.0 100 30.0 20.0 -65 to +175 Amps Amps Volts µA pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES 1N5400G THRU 1N5408G AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE 3 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 2.4 160 1.8 120 1.2 Single Phase Half Wave 60Hz Resistive or inductive Load 80 0.6 40 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 0 25 50 75 100 125 150 175 0 1 10 100 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4-TYPICAL REVERSE CHARACTERISTICS 1,000 INSTANTANEOUS FORWARD CURRENT,AMPERES 20 10 100 TJ=150 C 1 10 0.1 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 1 TJ=100 C 0.01 0.1 TJ=25 C 0.01 0.6 0.8 1.0 1.2 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE, C/W FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 JUNCTION CAPACITANCE, pF 200 100 TJ=25 C 10 10 1 0.1 1 0.01 0.1 1 10 100 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. www.shunyegroup.com
1N5407G
物料型号: - 1N5400G至1N5408G

器件简介: - 这些是玻璃钝化硅整流器,反向电压范围从50到1000伏特,正向电流为3.0安培。

引脚分配: - 器件采用JEDEC DO-201AD塑封体,带有镀层的轴向引脚,可按照MIL-STD-750标准方法2026进行焊接。

参数特性: - 最大重复峰值反向电压(VRRM):50至1000伏特 - 最大RMS电压(VRMS):35至700伏特 - 最大直流阻断电压(VDc):50至1000伏特 - 最大平均正向整流电流(I(AV)):3.0安培(0.375英寸/9.5mm引脚长度在TA=75°C时) - 峰值正向浪涌电流(IFSM):200安培(8.3ms单半正弦波叠加在额定负载上,JEDEC方法) - 最大瞬时正向电压在3.0A时(VF):1.2伏特 - 最大直流反向电流(IR):5.0毫安(TA=25°C时额定直流阻断电压TA=100°C) - 典型结电容(CJ):30.0皮法(注1) - 典型热阻(ROJA):20.0°C/W(注2)

功能详解: - 器件具有低反向漏电流、高正向浪涌电流能力、高温度焊接保证(250°C/10秒,0.375英寸/9.5mm引脚长度,5磅/2.3kg张力)。

应用信息: - 适用于需要整流功能的电路,如电源、电机控制等。

封装信息: - 封装为JEDEC DO-201AD塑封体,重量为0.04盎司/1.10克,尺寸以英寸和毫米给出。
1N5407G 价格&库存

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