B5817WS_1

Schottky Barrier Diode FEATURES Extremely low VF. Low stored change,majority carrier conduction. Low power loss/high efficient B5817WS-B5819WS Pb Lead-free APPLICATIONS For Use In Low Voltage, High Frequency Inverters. Free Wheeling, And Polarity Protection Applications. SOD-323 ORDERING INFORMATION Type No. B5817WS B5818WS B5819WS Marking SJ SK SL Package Code SOD-323 SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance Junction to Ambient Storage temperature symbol VRM VRRM VRWM VR VR(RMS) Io IFSM IFRM Pd RθJA TSTG B5817WS 20 B5818WS 30 B5819WS 40 Unit V 20 30 40 V 14 1 25 625 250 500 -65~+150 21 28 V A A mA mW ℃/W ℃ www.shunyegroup.com Schottky Barrier Diode B5817WS-B5819WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition IR=1mA Reverse breakdown voltage V(BR) B5817WS B5818WS B5819WS VR=20V VR=30V VR=40V B5817WS B5818WS B5819WS Diode capacitance CD VR=4V,f=1MHz B5817WS B5818WS B5819WS IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A 20 30 40 1 0.45 0.75 0.55 0.875 0.6 0.9 120 pF V V MIN MAX UNIT Reverse voltage leakage current IR mA Forward voltage VF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.shunyegroup.com Schottky Barrier Diode B5817WS-B5819WS www.shunyegroup.com Schottky Barrier Diode PACKAGE OUTLINE Plastic surface mounted package B5817WS-B5819WS SOD-323 K B SOD-323 C Dim A Min 1.275 1.675 Max 1.325 1.725 D A B C D E 0.9 Typical 0.25 0.27 0.02 0.35 0.37 0.1 J E H H J K 0.1 Typical 2.6 2.7 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device INFORMATION Package SOD-323 Shipping 3000/Tape&Reel B5817WS-B5819WS www.shunyegroup.com