SD103BWS

SD103AWS-SD103CWS SCHOTTKY DIODES SOD-323 1.35(0.053) 1.15(0.045) 1.26(.050) 1.24(.048) FEATURES Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time low reverse capacitance 2.70(0.106) 2.30(0.091) 1.80(0.071) 1.60(0.063) 2.70(0.106) 2.30(0.091) 1.80(0.071) 1.60(0.063) MECHANICAL DATA 0.4(0.016) .25(0.010) .177(.007) .089(.003) 1.00(.040) 0.80(.031) 0.1(0.004) MIN .305(0.012) .295(0.010) .72(0.028) .69(0.027) .08(.003) MIN Dimensions in millimeters and (inches) Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Mounting Position: Any Marking: SD103AWS:S4, SD103BWS:S5, SD103CWS:S6 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum ratings and electrical characteristics, Single diode @TA=25 PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Forward continuous current Repetitive peak forward current @t 1.0s Power dissipation Thermal resistance junction to ambient Storage temperature Electrical ratings @TA=25 PARAMETER Reverse breakdown voltage SD103AWS SD103BWS SD103CWS SYMBOLS SYMBOLS SD103AWS 40 28 SD103BWS 30 21 350 1.5 200 300 -65 to +125 SD103CWS 20 14 UNITS VOLTS V mA A mW /W VRRM VRMS VDC VR(RMS) IFM IFRM Pd RΘJA TSTG Min. Typ. Max. Unit V Conditions V(BR)R VF Fowrard voltage Reverse current SD103AWS SD103BWS SD103CWS Capacitance between terminals Reverse recovery time 40 30 20 0.37 0.60 5.0 50 10 V IRM CT trr uA pF ns IR=10uA IR=10uA IR=10uA IF=20mA IF=200mA VR=30V VR=20V VR=10V VR=0V,f=1.0MHz IF=IR=200mA Irr=0.1XIR,RL=100 www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES SD103AWS-SD103CWS FIG. 1- TYPICAL FORWARD CHARACTERISTICS 1000 100 FIG. 2-TYP. JUNCTION CAPACITANCE VS REVERSE VOLTAGE IF,FORWARD CURRENT(mA) CJ, CAPACITANCE(pF) 0 0.5 1.0 100 10 10 1.0 1.0 0.1 0.01 0.1 0 10 20 30 40 VR REVERSE VOLTAGE(V) VR REVERSE VOLTAGE(V) www.shunyegroup.com