SS82-SS820
Surface Mount Schottky Rectifier
DO-214AB/SMC
Features
● Guardring for overvoltage protection
● Low power loss
● Extremely fast switching
● High forward surge capability
● High frequency operation
● Solder dip 260 °C max. 10 s, per JESD 22-B106
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Typical Applications
0.280(7.11)
0.260(6.60)
For use in low voltage high frequency inverters, freewheeling,
DC/DC converters, and polarity protection applications.
0.012(0.305)
0.006(0.152)
Mechanical Data
● Package: DO-214AB (SMC)
0.103(2.62)
0.079(2.06)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: Color band denotes the cathode end
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
■ Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
UNIT
Device marking code
SS82
SS84
SS86
SS810
SS815
SS820
SS82
SS84
SS86
SS810
SS815
SS820
20
40
60
100
150
200
VRRM
V
IO
A
8.0
Surge(Non-repetitive)Forward Current
@60Hz Half-sine wave,1 cycle, Ta=25℃
IFSM
A
120
Storage Temperature
Tstg
℃
-55 ~+150
Junction Temperature
Tj
℃
Repetitive Peak Reverse Voltage
Average Rectified Output Current
@60Hz sine wave, Resistance load, Ta (FIG.1)
-55~+125
-55 ~+150
■ Electrical Characteristics (Ta=25℃ Unless otherwise specified)
SYMBOL
UNIT
TEST CONDITIONS
SS82
SS84
SS86
SS810
Maximum instantaneous
forward voltage drop per diode
VF
V
IFM=8.0A
0.55
0.60
0.70
0.85
Maximum DC reverse current
at rated DC blocking voltage
per diode
IR
mA
Typical junction capacitance
Cj
PARAMETER
pF
SS815
0.95
Ta=25℃
0.2
0.1
Ta=100℃
20
5.0
Measured at 1MHz
and Applied Reverse
Voltage of 4.0 V.D.C.
450
350
SS820
270
180
■ Thermal Characteristics (Ta=25℃ Unless otherwise specified)
PARAMETER
Thermal
Resistance
SYMBOL
Between junction and ambient
RθJ-A
Between junction and lead
RθJ-L
UNIT
SS82
SS84
SS86
SS810
45
SS815
SS820
(1)
℃/W
12
1)
Note (1)
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper pad areas
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SS82-SS820
Surface Mount Schottky Rectifier
Typical Characteristics
FIG.1: Io-TL Curve
FIG.2: Forward Surge Current Capability
200
Peak Forward Surge Current (A)
10.0
8.0
20
S8
-S
86
SS
4
S8
-S
82
SS
Average Forward Output Current (A)
12.0
6.0
4.0
0
0
25
75
50
120
80
40
Resistive or Inductive LoadP.C.B.
Mounted on
0.6"×0.6"(16mm×16mm)Copper Pad
Areas
2.0
8.3ms Single Half Sine Wave
JEDEC Method
160
125
100
Lead Temperature (℃)
0
150
1
2
FIG.3: Forward Voltage
20
100
FIG.4: Typical Reverse Characteristics
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
1.0
SS82
SS84
SS86
SS810
SS815-SS820
0.1
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
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0.9
1.0
Instantaneous Reverse Current (mA)
100
Instantaneous Forward Current (A)
10
Number of Cycles
SS810-SS820
SS86
SS82-SS84
10
Tj=100℃
1.0
0.1
Tj=25℃
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
2/2
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