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SS84

SS84

  • 厂商:

    SY(顺烨)

  • 封装:

    DO-214AB(SMC)

  • 描述:

    直流反向耐压(Vr):40V 平均整流电流(Io):8A 正向压降(Vf):550mV@8A

  • 数据手册
  • 价格&库存
SS84 数据手册
SS82-SS820 Surface Mount Schottky Rectifier DO-214AB/SMC Features ● Guardring for overvoltage protection ● Low power loss ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 260 °C max. 10 s, per JESD 22-B106 0.245(6.22) 0.220(5.59) 0.126 (3.20) 0.114 (2.90) Typical Applications 0.280(7.11) 0.260(6.60) For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 0.012(0.305) 0.006(0.152) Mechanical Data ● Package: DO-214AB (SMC) 0.103(2.62) 0.079(2.06) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Color band denotes the cathode end 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeters) ■ Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Device marking code SS82 SS84 SS86 SS810 SS815 SS820 SS82 SS84 SS86 SS810 SS815 SS820 20 40 60 100 150 200 VRRM V IO A 8.0 Surge(Non-repetitive)Forward Current @60Hz Half-sine wave,1 cycle, Ta=25℃ IFSM A 120 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ Repetitive Peak Reverse Voltage Average Rectified Output Current @60Hz sine wave, Resistance load, Ta (FIG.1) -55~+125 -55 ~+150 ■ Electrical Characteristics (Ta=25℃ Unless otherwise specified) SYMBOL UNIT TEST CONDITIONS SS82 SS84 SS86 SS810 Maximum instantaneous forward voltage drop per diode VF V IFM=8.0A 0.55 0.60 0.70 0.85 Maximum DC reverse current at rated DC blocking voltage per diode IR mA Typical junction capacitance Cj PARAMETER pF SS815 0.95 Ta=25℃ 0.2 0.1 Ta=100℃ 20 5.0 Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C. 450 350 SS820 270 180   ■ Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER Thermal Resistance SYMBOL Between junction and ambient RθJ-A Between junction and lead RθJ-L UNIT SS82 SS84 SS86 SS810 45 SS815 SS820 (1) ℃/W 12 1) Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper pad areas www.shunyegroup.com.cn 1/2 SS82-SS820 Surface Mount Schottky Rectifier Typical Characteristics FIG.1: Io-TL Curve FIG.2: Forward Surge Current Capability 200 Peak Forward Surge Current (A) 10.0 8.0 20 S8 -S 86 SS 4 S8 -S 82 SS Average Forward Output Current (A) 12.0 6.0 4.0 0 0 25 75 50 120 80 40 Resistive or Inductive LoadP.C.B. Mounted on 0.6"×0.6"(16mm×16mm)Copper Pad Areas 2.0 8.3ms Single Half Sine Wave JEDEC Method 160 125 100 Lead Temperature (℃) 0 150 1 2 FIG.3: Forward Voltage 20 100 FIG.4: Typical Reverse Characteristics 100 TJ=25℃ Pulse width=300us 1% Duty Cycle 10 1.0 SS82 SS84 SS86 SS810 SS815-SS820 0.1 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V) www.shunyegroup.com.cn 0.9 1.0 Instantaneous Reverse Current (mA) 100 Instantaneous Forward Current (A) 10 Number of Cycles SS810-SS820 SS86 SS82-SS84 10 Tj=100℃ 1.0 0.1 Tj=25℃ 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 2/2

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SS84
  •  国内价格
  • 5+0.64045
  • 50+0.51876
  • 150+0.45791
  • 500+0.41233
  • 3000+0.37578
  • 6000+0.35751

库存:2856