SPC4703DF8RGB

SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. APPLICATIONS Battery Powered System DC/DC Buck Converter Load Switch Cell Phone FEATURES P-Channel -20V/-3.4A,RDS(ON)= 90mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=155mΩ@VGS=-1.8V Schottky VKA (V) = 20V, IF = 1A, VF