SPN1423AS35RG

厂商：
SYNC-POWER
封装：
描述：
SPN1423AS35RG - N-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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数据手册
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SPN1423AS35RG 数据手册

SPN1423A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 20V/4.0A,RDS(ON)=80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=90mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=110mΩ@VGS=1.8V 20V/1.0A,RDS(ON)=140mΩ@VGS=1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-353 ( SC – 70 ) package design PIN CONFIGURATION ( SOT-353 ; SC-70 ) PART MARKING 2006/03/20 Ver.3 Page 1 SPN1423A N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 2 3 1,4,5 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number SPN1423AS35RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN1423AS35RG : Tape Reel ; Pb – Free Package SOT-353 Part Marking 2AYW ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 20 ±12 Unit V V A A A W ℃ ℃ ℃/W 2.4 1.7 6 1.6 0.95 0..51 -55/150 -55/150 105 2006/03/20 Ver.3 Page 2 SPN1423A N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=6V,RL=6Ω ID≡1.0A,VGEN=4.5V RG=6Ω VDS=6V,VGS=0V f=1MHz VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VDS≦5V,VGS=4.5V VGS=4.5V,ID=4.0A VGS=2.5V,ID=3.4A VGS=1.8V,ID=2.8A VGS=1.25V,ID=1.0A VDS=5V,ID=-3.6A IS=1.6A,VGS=0V 20 0.4 1.0 ±100 1 5 6 0.065 0.075 0.090 0.120 10 0.8 4.8 1.0 1.0 485 85 40 8 12 30 12 14 18 35 16 0.080 0.090 0.110 0.140 1.2 8 V nA uA A Ω S V VDS=6V,VGS=4.5V ID≡2.8A nC pF ns 2006/03/20 Ver.3 Page 3 SPN1423A N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/03/20 Ver.3 Page 4 SPN1423A N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/03/20 Ver.3 Page 5 SPN1423A N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/03/20 Ver.3 Page 6 SPN1423A N-Channel Enhancement Mode MOSFET SOT-353 PACKAGE OUTLINE 2006/03/20 Ver.3 Page 7 SPN1423A N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2006/03/20 Ver.3 Page 8

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SPN1423AS35RG

1. 物料型号： - 型号为SPN1423A，这是N-Channel逻辑增强型功率场效应晶体管。

2. 器件简介： - SPN1423A采用高单元密度、DMOS沟槽技术生产，专为最小化导通电阻而设计。适用于低电压应用，如手机和笔记本电脑电源管理、其他电池供电电路，在这些应用中需要高侧开关、低内联功率损失，并以非常小的外形尺寸表面贴装封装。

3. 引脚分配： - 引脚2：G（栅极） - 引脚3：S（源极） - 引脚1、4、5：D（漏极）

4. 参数特性： - 漏源电压(VDSS)：20V - 栅源电压(VGSS)：±12V - 连续漏电流(ID)：在25°C时为2.4A，在150°C时为1.7A - 脉冲漏电流(IDM)：6A - 连续源电流(Is)：1.6A - 功率耗散(PD)：在25°C时为0.95W，在70°C时为0.51W - 工作结温(TJ)：-55°C至150°C - 存储温度范围(TSTG)：-55°C至150°C - 热阻(ROJA)：105°C/W

5. 功能详解： - 提供了非常低的导通电阻和最大直流电流能力，适合需要高侧开关和低内联功率损失的应用。

6. 应用信息： - 笔记本电脑电源管理、便携设备、电池供电系统、DC/DC转换器、负载开关、DSC、LCD显示逆变器。

7. 封装信息： - 采用SOT-353( SC-70)封装设计，具体尺寸和英寸对照如下： - A: 0.900mm至1.100mm，0.035至0.043英寸 - A1: 0.000至0.100mm，0.000至0.004英寸 - A2: 0.900至1.000mm，0.035至0.039英寸 - b: 0.150至0.350mm，0.006至0.014英寸 - C: 0.080至0.150mm，0.003至0.006英寸 - D: 2.000至2.200mm，0.079至0.087英寸 - E: 1.150至1.350mm，0.045至0.053英寸 - E1: 2.150至2.450mm，0.085至0.096英寸 - e: 0.650mm典型值，0.026英寸典型值 - e1: 1.200至1.400mm，0.047至0.055英寸 - L: 0.525mm参考值，0.021英寸参考值 - L1: 0.260至0.460mm，0.010至0.018英寸 - e: 0°至8°

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