SPN4436

厂商：
SYNC-POWER
封装：
描述：
SPN4436 - N-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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数据手册
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SPN4436 数据手册

SPN4436 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS DC/DC Converter Load Switch FEATURES 60V/8.0A,RDS(ON)= 38mΩ@VGS= 10V 60V/6.0A,RDS(ON)= 44mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2009 / 04 / 05 Ver.1 Page 1 SPN4436 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number SPN4436S8RGB Package SOP- 8P Part Marking SPN4436 ※ SPN4436S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IAS PD TJ TSTG RθJA Typical 60 ±20 Unit V V A A A W ℃ ℃ ℃/W 8.0 7.2 35 15 2.5 1.6 -55/150 -55/150 80 2009 / 04 / 05 Ver.1 Page 2 SPN4436 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=30V,RL=6.8Ω ID≡4.4A,VGEN=10V RG=1Ω VDS=30V,VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=60V,VGS=0V VDS=60V,VGS=0V TJ=85℃ VDS≥5V,VGS =10V VGS= 10V,ID=8A VGS=4.5V,ID=6A VDS=15V,ID=5.3A IS=2.0A,VGS =0V 60 0.8 2.0 ±100 1 5 30 0.034 0.038 24 0.8 10 3.5 3.6 890 85 48 10 12 25 10 15 20 35 15 0.038 0.044 1.2 15 V nA uA A Ω S V VDS=30V,VGS=5V ID= 5.3A nC pF nS 2009 / 04 / 05 Ver.1 Page 3 SPN4436 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.1 Page 4 SPN4436 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.1 Page 5 SPN4436 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.1 Page 6 SPN4436 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.1 Page 7 SPN4436 N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2009 / 04 / 05 Ver.1 Page 8 SPN4436 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009 / 04 / 05 Ver.1 Page 9

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SPN4436

1. 物料型号： - 型号：SPN4436 - 封装：SOP-8P

2. 器件简介： - SPN4436是一款N-Channel逻辑增强型功率场效应晶体管，采用高单元密度、DMOS沟槽技术生产。 - 该高密度工艺特别针对最小化导通电阻而设计。 - 这些器件特别适合低电压应用、笔记本电脑电源管理以及其他电池供电电路中的高端侧开关。

3. 引脚分配： - 引脚1、2、3：S（源极） - 引脚4：G（栅极） - 引脚5、6、7、8：D（漏极）

4. 参数特性： - 漏源电压：60V - 栅源电压：±20V - 连续漏电流（TA=25°C）：8.0A - 脉冲漏电流：35A - 雪崩电流：15A - 功率耗散（TA=25°C）：2.5W - 工作结温：-55/150°C - 存储温度范围：-55/150°C - 热阻（结到环境）：80°C/W

5. 功能详解： - 该器件具有60V/8.0A的漏源电压和电流能力，以及在VGS=10V时RDS(ON)=38mΩ的低导通电阻。 - 采用4.5V超高密度单元设计，以实现极低的RDS(ON)和最大直流电流能力。

6. 应用信息： - 适用于DC/DC转换器负载开关等低电压应用。

7. 封装信息： - SOP-8P封装，标记为SPN4436。 - 还提供了SPN4436S8RGB型号，表示13英寸胶带卷；无铅；无卤素。

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