SPN7002D

SPN7002D Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002D is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. High saturation current capability. Direct Logic-Level Interface: TTL/CMOS Battery Operated Systems Solid-State Relays FEATURES 60V/0.50A , RDS(ON)= 5.0Ω@VGS=10V 60V/0.30A , RDS(ON)= 5.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design PIN CONFIGURATION ( SOT-363 / SC-70-6L ) PART MARKING 2006/09/10 Ver.1 Page 1 SPN7002D Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number SPN7002DS36RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN7002DS36RG : Tape Reel ; Pb – Free Package SOT-363 Part Marking 702YW ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage - Continuous Gate –Source Voltage - Non Repetitive ( tp < 50μs) Continuous Drain Current(TJ=150℃) Pulsed Drain Current (∗) Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=25℃ Symbol VDSS VGSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 60 ±20 ±40 0.5 1.0 0.25 0.35 -55 ~ 150 -55 ~ 150 375 Unit V V V A A A W ℃ ℃ ℃/W (∗) Pulse width limited by safe operating area 2006/09/10 Ver.1 Page 2 SPN7002D Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS VDS=0V,VGS=±20V VDS=60V,VGS=0V VDS=60V,VGS=0V TJ=125℃ VGS=10V,ID=0.50A VGS= 5V,ID=0.30A VGS= 4.5V,ID=0.05A 60 1.0 1.7 2.5 ±100 1 10 3.5 4.0 3.7 5.0 5.5 5.5 0.35 1.4 1.5 V nA uA Symbol Conditions Min. Typ Max. Unit Drain-Source On-Resistance Source-drain Current Source-drain Current (pulsed) Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time RDS(on) Ω A A S V ISD ISDM (2) Gfs(1) VDS = 10 V, ID = 0.5 A VSD(1) VGS = 0 V, IS = 0.12A 0.6 0.85 Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD = 30 V, ID = 1 A, VGS = 5 V 1.4 0.8 0.5 43 20 6 5 2.0 nC VDS = 25 V, f = 1 MHz, VGS = 0 pF VDD = 30 V, ID = 0.5 A RG = 4.7Ω VGS = 4.5 V 15 7 8 ns (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 2006/09/10 Ver.1 Page 3 SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/09/10 Ver.1 Page 4 SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/09/10 Ver.1 Page 5 SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/09/10 Ver.1 Page 6 SPN7002D Dual N-Channel Enhancement Mode MOSFET TYPICAL TESTING CIRCUIT 2006/09/10 Ver.1 Page 7 SPN7002D Dual N-Channel Enhancement Mode MOSFET SOT-363 PACKAGE OUTLINE 2006/09/10 Ver.1 Page 8 SPN7002D Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2006/09/10 Ver.1 Page 9