SPN8080

厂商：
SYNC-POWER
封装：
描述：
SPN8080 - N-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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详情介绍
数据手册
价格&库存

SPN8080 数据手册

SPN8080 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2008 / 11 / 25 Ver.1 Page 1 SPN8080 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN8080T220TGB Package TO-220-3L Part Marking SPN8080 ※ SPN8080T220TGB: Tube ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Avalanche Current Power Dissipation Avalanche Energy with Single Pulse ( Tj=25℃, ID=30A, VDD=37.5V ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IAS PD EAS TJ TSTG RθJA Typical 80 ±20 Unit V V A A A W mJ 80 15 300 15 62.5 3.38 400 -55/150 -55/150 2 ℃ ℃ ℃/W 2008 / 11 / 25 Ver.1 Page 2 SPN8080 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=40V,RL=20Ω ID≡37A,VGEN=10V RG=3.3Ω VDS=25VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ = 150 °C VDS≥5V,VGS =10V VGS= 10V,ID=80A VGS= 6V,ID=37A VDS=10V,ID=80A IS=40A,VGS =0V 80 2.0 4.0 ±100 1 250 70 4.0 5.8 150 4.7 8.7 1.5 250 83 62 14500 850 280 V nA uA A mΩ S V VDS=40V,VGS=10V ID= 80A nC pF 80 37 140 27 nS 2008 / 11 / 25 Ver.1 Page 3 SPN8080 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008 / 11 / 25 Ver.1 Page 4 SPN8080 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008 / 11 / 25 Ver.1 Page 5 SPN8080 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008 / 11 / 25 Ver.1 Page 6 SPN8080 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008 / 11 / 25 Ver.1 Page 7 SPN8080 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE 2008 / 11 / 25 Ver.1 Page 8 SPN8080 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 2008 / 11 / 25 Ver.1 Page 9 SPN8080 N-Channel Enhancement Mode MOSFET ©http://www.syncpower.com 2008 / 11 / 25 Ver.1 Page 10

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SPN8080

1. 物料型号： - 型号为SPN8080，是一种N-Channel Enhancement Mode MOSFET。

2. 器件简介： - SPN8080是使用高单元密度、DMOS沟槽技术生产的N-Channel逻辑增强型功率场效应晶体管。这种高密度工艺特别适用于最小化导通电阻。这些器件特别适合于低电压应用、笔记本电脑电源管理以及其他电池供电电路中的高端侧开关。

3. 引脚分配： - PIN CONFIGURATION(TO-220-3L)： - 1号引脚：G（栅极） - 2号引脚：D（漏极） - 3号引脚：S（源极）

4. 参数特性： - 绝对最大额定值（TA=25℃除非另有说明）： - 漏极-源极电压（VDSS）：80V - 栅极-源极电压（VGSS）：±20V - 连续漏极电流（ID）：80A（TJ=150℃）、15A（TA=25℃）、TA=70℃ - 脉冲漏极电流（IDM）：300A - 雪崩电流（IAS）：15A - 功率耗散（PD）：62.5W（TA=25℃）、3.38W（TA=70℃） - 雪崩能量（EAS）：400mJ（Tj=25℃, ID=30A, VDD=37.5V） - 电气特性： - 静态特性包括漏极-源极击穿电压、栅极阈值电压、栅极漏电流、零栅极电压漏极电流、导通漏极电流、漏源导通电阻等。 - 动态特性包括总栅极电荷、栅源电荷、栅漏电荷、输入电容、输出电容、反向传输电容、开通时间、关闭时间等。

5. 功能详解： - SPN8080是一种N-Channel MOSFET，适用于DC/DC转换器、负载开关、SMPS次级侧同步整流等应用。

6. 应用信息： - 适用于低电压应用、笔记本电脑电源管理以及其他电池供电电路中的高端侧开关。

7. 封装信息： - 封装类型为TO-220-3L，文档中提供了详细的封装尺寸图和尺寸数据。

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