SPN8439S223RG

SPN8439 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8439 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES 30V/6.2A,RDS(ON)= 42mΩ@VGS=4.5V 30V/5.4A,RDS(ON)= 54mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design APPLICATIONS Power Management in Note book DC/DC Converter LCD Display inverter PIN CONFIGURATION(SOT-223) PART MARKING 2007/07/30 Ver.1 Page 1 SPN8439 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPN8439S223RG ※ SPN8439S223RG : Tape Reel ; Pb – Free Package SOT-223 Part Marking 8439 Symbol G S D Description Gate Source Drain ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±12 5.8 4.2 25 1.7 2.8 1.2 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W 2007/07/30 Ver.1 Page 2 SPN8439 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD VDS=0V,VGS=±12V VDS=24V,VGS=1.0V VDS=24V,VGS=0.0V TJ=55℃ VDS≧4.5V,VGS=4.5V VGS =4.5V,ID=6.2A VGS =2.5V,ID=5.4A VDS=4.5V,ID=5.4A IS=1.7A,VGS=0V 30 0.8 1.6 ±100 1 10 10 0.034 0.040 12 0.8 0.042 0.054 1.2 V nA uA A Ω S V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=15VGS=10V ID≡6.7A 10 1.6 3.2 450 240 38 7 18 nC VDS=15VGS=0V f=1MHz pF 15 20 40 20 ns VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω 10 20 11 2007/07/30 Ver.1 Page 3 SPN8439 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/07/30 Ver.1 Page 4 SPN8439 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/07/30 Ver.1 Page 5 SPN8439 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/07/30 Ver.1 Page 6 SPN8439 N-Channel Enhancement Mode MOSFET SOT-233 PACKAGE OUTLINE 2007/07/30 Ver.1 Page 7 SPN8439 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2007/07/30 Ver.1 Page 8