SPN8822ATS8RG

SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 20V/5.8A,RDS(ON)=30mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSSOP – 8P package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION(SOP – 8P) PART MARKING 2007/06/20 Ver.1 Page 1 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPN8822ATS8RG SPN8822ATS8TG ※ SPN8822ATS8RG : 13” Tape Reel ; Pb – Free ※ SPN8822ATS8TG : Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol D1 / D2 S1 S1 G1 G2 S2 S2 D1 / D2 Description Drain Source Source Gate Gate Source Source Drain Package TSSOP- 8P TSSOP- 8P Part Marking 8822 8822 Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical 20 ±12 Unit V V A A A W ℃ ℃ ℃/W 7.2 5.4 30 2.3 1.5 0.9 -55/150 -55/150 80 2007/06/20 Ver.1 Page 2 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VDS≥5V,VGS=4.5V VGS=4.5V,ID=5.8A VGS=2.5V,ID=5.0A VDS=15V,ID=5.0A IS=1.7A,VGS=0V 20 0.6 ±100 1 10 6 0.024 0.032 30 0.8 0.030 0.042 1.2 V nA uA A Ω S V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=10V, VGS=4.5V, ID=6.0A 2 2.5 2.1 575 84 22 10 14 20 40 10 ns pF nC VDS=8V,VGS=0V f=1MHz VDD=10V,RL=6Ω ID≡1.0A,VGEN=4.5V RG=6Ω 16 35 3 2007/06/20 Ver.1 Page 3 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/06/20 Ver.1 Page 4 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/06/20 Ver.1 Page 5 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/06/20 Ver.1 Page 6 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET TSSOP- 8P PACKAGE OUTLINE 2007/06/20 Ver.1 Page 7 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 2007/06/20 Ver.1 Page 8 SPN8822A Common-Drain Dual N-Channel Enhancement Mode MOSFET ©http://www.syncpower.com 2007/06/20 Ver.1 Page 9