SPN8878T252RGB

SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES 30V/20A,RDS(ON)= 12mΩ@VGS=10V 30V/15A,RDS(ON)= 17mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch PIN CONFIGURATION TO-252 PART MARKING 2009/04/20 Ver.1 Page 1 SPN8878 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package Part Marking SPN8878T252RGB TO-252 ※ SPN8878T252RG : Tape Reel ; Pb – Free ; Halogen - Free SPN8878 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current TO-252-2L Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TO-251 TA=25℃ TA=100℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 18 13 40 5 40 55 150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W 2009/04/20 Ver.1 Page 2 SPN8878 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=15V,RL=0.3Ω ID≡50A,VGEN=10V RG=1Ω VDS=15VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85℃ VDS≥5V,VGS =10V VGS= 10V,ID=20A VGS=4.5V,ID=15A VDS=15V,ID=20A IS=40A,VGS =0V 30 1.0 3.0 ±100 1 5 40 0.010 0.013 15 0.8 28 6 5 1600 285 140 9 15 20 12 15 25 30 20 1.5 42 0.012 0.017 V nA uA A Ω S V VDS=15V,VGS=10V ID= 50A nC pF nS 2009/04/20 Ver.1 Page 3 SPN8878 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/20 Ver.1 Page 4 SPN8878 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/20 Ver.1 Page 5 SPN8878 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/20 Ver.1 Page 6 SPN8878 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2009/04/20 Ver.1 Page 7 SPN8878 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/04/20 Ver.1 Page 8