SPN9507T220TGB

SPN9507 N-Channel Enhancement Mode MOSFET 28DESCRIPTION The SPN9507 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 75V/60A,RDS(ON)= 5.0mΩ@VGS= 10V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2009/06/20 Ver.1 Page 1 SPN9507 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN9507T220TGB Package TO-220-3L Part Marking SPN9507 ※ SPN9507T220TGB: Tube ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM PD EAS TJ TSTG RθJA Typical 75 ±20 Unit V V A A W mJ 80 70 240 300 3.38 380 Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 80A , VDD = 60V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 -55/150 2 ℃ ℃ ℃/W 2009/06/20 Ver.1 Page 2 SPN9507 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS VDS=0V,VGS=±20V VDS=75V,VGS=0V VDS=60V,VGS=0V TJ = 150 °C VDS=10V,ID=60A IS=60A,VGS =0V 75 2.0 4.0 ±100 10 250 5.0 57 1.3 85 25 36 4290 985 390 22 V nA uA mΩ S V RDS(on) VGS= 10V,ID=60A gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=40V,RL=0.5Ω ID≡80A,VGEN=10V RG=3.3Ω VDS=25V,VGS=0V f=1MHz VDS=40V,VGS=10V ID= 80A 135 nC 6870 pF 160 38 165 nS 2009/06/20 Ver.1 Page 3 SPN9507 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/20 Ver.1 Page 4 SPN9507 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/20 Ver.1 Page 5 SPN9507 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/20 Ver.1 Page 6 SPN9507 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/20 Ver.1 Page 7 SPN9507 N-Channel Enhancement Mode MOSFET TO-220-3L PACKAGE OUTLINE 2009/06/20 Ver.1 Page 8 SPN9507 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/06/20 Ver.1 Page 9