SPN9977T251TGB

厂商：
SYNC-POWER
封装：
描述：
SPN9977T251TGB - N-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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数据手册
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SPN9977T251TGB 数据手册

SPN9977 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9977 is the N-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology. The SPN9977 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES 60V/8A,RDS(ON)= 115mΩ@VGS= 10V 60V/6A,RDS(ON)= 110mΩ@VGS= 4.5V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch PIN CONFIGURATION TO-252 TO-251 PART MARKING 2009/04/25 Ver.1 Page 1 SPN9977 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package Part Marking SPN9977T252RGB TO-252 SPN9977T251TGB TO-251 ※ SPN9977T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN9977T251RGB : Tube ; Pb – Free ; Halogen - Free SPN9977 SPN9977 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TO-252-2L TO-251 TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IAS PD TJ TSTG RθJA Typical 60 ±20 Unit V V A A A W ℃ ℃ ℃/W 14 9.0 45 14 40 55 150 -55/150 100 2009/04/25 Ver.1 Page 2 SPN9977 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=30V,RL=8.8Ω ID≡3.4A,VGEN=10V RG=1Ω VDS=15,VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=60V,VGS=0V VDS=60V,VGS=0V TJ=85℃ VDS≥5V,VGS =10V VGS= 10V,ID=8A VGS=4.5V,ID=6A VDS=15V,ID=4.3A IS=1.7A,VGS =0V 60 0.5 1.5 ±100 1 5 14 0.110 0.105 15 0.8 15 2.5 2.6 675 80 40 10 15 25 12 20 25 35 20 0.115 0.110 1.2 20 V nA uA A Ω S V VDS=30V,VGS=10V ID= 4.3A nC pF nS 2009/04/25 Ver.1 Page 3 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 4 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 5 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 6 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 7 SPN9977 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2009/04/25 Ver.1 Page 8 SPN9977 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2009/04/25 Ver.1 Page 9 SPN9977 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/04/25 Ver.1 Page 10

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SPN9977T251TGB

物料型号： - SPN9977T252RGB（TO-252封装） - SPN9977T251TGB（TO-251封装）

器件简介： SPN9977是一款N-Channel逻辑增强型功率场效应晶体管，采用超高单元密度、DMOS沟槽技术生产。该器件专为提高使用同步或传统开关PWM控制器的DC/DC转换器的整体效率而设计。它针对低栅极电荷、低RDS(ON)和快速开关速度进行了优化。

引脚分配： - TO-252封装：G（栅极）、S（源极）、D（漏极） - TO-251封装：G（栅极）、S（源极）、D（漏极）

参数特性： - 漏源电压（VDSS）：60V - 栅源电压（VGSS）：-30V - 栅漏电压（VGSS）：-30V - 连续漏电流（ID）：8A（@VGS=10V，RDS(ON)=115mΩ） - 脉冲漏电流（IDM）：30A（@VGS=10V） - 低RDS(ON)：115mΩ（@VGS=10V），110mΩ（@VGS=4.5V）

功能详解： SPN9977具有高密度单元设计，极低的RDS(ON)，出色的导通电阻和最大直流电流能力。它适用于笔记本电脑电源系统中的DC/DC转换器负载开关。

应用信息： - 笔记本电脑电源系统中的DC/DC转换器负载开关

封装信息： - TO-252封装 - TO-251封装

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