SPP3467ST6RG

厂商：
SYNC-POWER
封装：
描述：
SPP3467ST6RG - P-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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数据手册
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SPP3467ST6RG 数据手册

SPP3467 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3467 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES -20V/-5.0A,RDS(ON)= 90mΩ@VGS=-4.5V -20V/-3.5A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=140mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design PIN CONFIGURATION(TSOP-6P) PART MARKING 2007/04/25 Ver.1 Page 1 SPP3467 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 ORDERING INFORMATION Part Number SPP3467ST6RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3467ST6RG : Tape Reel ; Pb – Free Package TSOP-6P Part Marking 67YW Symbol D D G S D D Description Drain Drain Gate Source Drain Drain ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -20 ±12 -5.2 -4.2 -20 -1.7 2.0 1.3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W 2007/04/25 Ver.1 Page 2 SPP3467 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=-6V,RL=6Ω ID≡-1.0A,VGEN=-4.5V RG=6Ω VDS=-6V,VGS=0V f=1MHz VDS=0V,VGS=±12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V VGS=-4.5V,ID=-5.0A VGS=-2.5V,ID=-3.5A VGS=-1.8V,ID=-1.7A VDS=-5V,ID=-2.8A IS=-1.5A,VGS=0V -20 -0.35 -0.8 ±100 -1 -5 -6 0.075 0.090 0.120 6 -0.8 4.8 1.0 1.0 485 85 40 10 13 18 15 16 23 25 20 0.090 0.110 0.140 -1.2 8 V nA uA A Ω S V VDS=-6V,VGS=-4.5V ID≡-2.8A nC pF ns 2007/04/25 Ver.1 Page 3 SPP3467 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/04/25 Ver.1 Page 4 SPP3467 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/04/25 Ver.1 Page 5 SPP3467 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2007/04/25 Ver.1 Page 6 SPP3467 P-Channel Enhancement Mode MOSFET TSOP- 6P PACKAGE OUTLINE 2007/04/25 Ver.1 Page 7 SPP3467 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2007/04/25 Ver.1 Page 8

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SPP3467ST6RG

1. 物料型号： - 型号：SPP3467 - 封装：TSOP-6P - 部件标记：67YW

2. 器件简介： - SPP3467是一款使用高密度单元、DMOS沟槽技术生产的P沟道逻辑增强型功率场效应晶体管。这种高密度工艺特别适用于最小化导通电阻。这些器件特别适合于低电压应用，如手机和笔记本电脑的电源管理，以及其他需要低在线功耗的电池供电电路，并在非常小的表面贴装封装中使用。

3. 引脚分配： - 1号引脚：漏极(Drain) - 2号引脚：漏极(Drain) - 3号引脚：栅极(Gate) - 4号引脚：源极(Source) - 5号引脚：漏极(Drain) - 6号引脚：漏极(Drain)

4. 参数特性： - 漏源电压：-20V - 栅源电压：±12V - 连续漏极电流(T=150°C)：-5.2A (TA=25°C时)，-4.2A (TA=70°C时) - 脉冲漏极电流：-20A - 连续源极电流(二极管导通)：-1.7A - 功率耗散：2.0W (TA=25°C时)，1.3W (TA=70°C时) - 工作结温：150℃ - 存储温度范围：-55/150℃ - 热阻(结到环境)：90℃/W

5. 功能详解： - SPP3467具有超低导通电阻和最大直流电流能力，TSOP-6P封装设计。 - 适用于电源管理、便携设备、电池供电系统、DC/DC转换器、负载开关、DSC、LCD显示逆变器等应用。

6. 应用信息： - 笔记本电源管理、便携设备、电池供电系统、DC/DC转换器、负载开关、DSC、LCD显示逆变器等。

7. 封装信息： - TSOP-6P封装，具体尺寸信息如下： - A: 0.91mm最小，1.10mm标称，0.038英寸标称，0.043英寸最大 - B: 0.30mm最小，0.45mm最大，0.012英寸最小，0.018英寸最大 - C: 0.10mm最小，0.20mm最大，0.004英寸最小，0.008英寸最大 - D: 2.95mm最小，3.10mm最大，0.116英寸最小，0.122英寸最大 - E: 2.70mm最小，2.98mm最大，0.106英寸最小，0.117英寸最大 - L: 0.35mm最小，0.50mm最大，0.014英寸最小，0.020英寸最大

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