SPP4435

厂商：
SYNC-POWER
封装：
描述：
SPP4435 - P-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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数据手册
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SPP4435 数据手册

SPP4435 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES -30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2008/12/01 Ver.2 Page 1 SPP4435 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPP4435S8RG SPP4435S8RGB Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Package SOP- 8P SOP- 8P Part Marking SPP4435 SPP4435 ※ SPP4435S8RG : 13” Tape Reel ; Pb – Free ※ SPP4435S8RGB : 13”Tape Reel ; Pb – Free; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 Unit V V A A A W ℃ ℃ ℃/W -10.0 -7.0 -50 -2.3 2.8 1.8 -55/150 -55/150 70 2008/12/01 Ver.2 Page 2 SPP4435 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω VDS=-15V,VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85℃ VDS= -5V,VGS =-4.5V VGS=-10V,ID=-9.2A VGS=-4.5V,ID=-7.0A VDS=-10V,ID=-9.0A IS=-2.3A,VGS =0V -30 -1.0 -3.0 ±100 -1 -5 -40 0.022 0.030 24 -0.8 16 2.3 4.5 1650 350 235 16 17 65 35 30 30 110 80 0.025 0.035 -1.2 24 V nA uA A Ω S V VDS=-15V,VGS=-10V ID= -9.0A nC pF nS 2008/12/01 Ver.2 Page 3 SPP4435 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/01 Ver.2 Page 4 SPP4435 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/01 Ver.2 Page 5 SPP4435 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/12/01 Ver.2 Page 6 SPP4435 P-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2008/12/01 Ver.2 Page 7 SPP4435 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2008/12/01 Ver.2 Page 8

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SPP4435

物料型号： - SPP4435S8RG - SPP4435S8RGB

器件简介： SPP4435是一款P-Channel逻辑增强型功率场效应晶体管，使用高单元密度、DMOS沟槽技术生产。这种高密度工艺特别适用于最小化导通电阻。这些器件特别适合于低电压应用、笔记本电脑电源管理以及其他电池供电电路中的高端侧开关。

引脚分配： | Pin | Symbol | Description | | --- | --- | --- | | 1 | S | Source | | 2 | S | Source | | 3 | S | Source | | 4 | G | Gate | | 5 | D | Drain | | 6 | D | Drain | | 7 | D | Drain | | 8 | D | Drain |

参数特性： - 漏源电压：-30V - 栅源电压：±20V - 连续漏电流（TJ=150°C）：-10.0A/-7.0A - 脉冲漏电流：-50A - 连续源电流（二极管导通）：-2.3A - 功率耗散：2.8W/1.8W - 工作结温：-55/150°C - 存储温度范围：-55/150°C - 热阻（结到环境）：70°C/W

功能详解： - 超高密度单元设计，实现极低的RDS(ON) - 出色的导通电阻和最大直流电流能力 - SOP-8P封装设计

应用信息： - 笔记本电脑的电源管理 - 便携式设备电池供电系统 - DC/DC转换器 - 负载开关 - 数码单反相机LCD显示器逆变器

封装信息： - 封装类型：SOP-8P - 封装标记：SPP4435

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