SPP9434S8RG

厂商：
SYNC-POWER
封装：
描述：
SPP9434S8RG - P-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

数据手册：

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数据手册
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SPP9434S8RG 数据手册

SPP9434 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES -20V/-7.2 A,RDS(ON)= 40mΩ@VGS=-4.5V -20V/-5.2 A,RDS(ON)= 52mΩ@VGS=-2.5V -20V/-3.6 A,RDS(ON)= 62mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP-8P package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION(SOP – 8P) PART MARKING 2008/10/05 Ver.2 Page 1 SPP9434 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPP9434S8RG SPP9434S8RGB Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Package SOP- 8P SOP- 8P Part Marking SPP9434 SPP9434 ※ SPP9434S8RG : 13” Tape Reel ; Pb – Free ※ SPP9434S8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -20 ±12 Unit V V A A A W ℃ ℃ ℃/W -7.6 -5.4 -30 -2.3 2.8 1.8 -55/150 -55/150 70 2008/10/05 Ver.2 Page 2 SPP9434 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) VDS=0V,VGS=±12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V -20 -0.35 -0.9 ±100 -1 -10 -10 0.030 0.040 0.050 14 -0.8 0.040 0.052 0.062 -1.2 V nA uA A Ω S V VGS=- 4.5V,ID=-7.2A RDS(on) VGS=- 2.5V,ID=-5.2A VGS=- 1.8V,ID=-3.6A gfs VDS=-5.0V,ID=-6.2A VSD IS=-2.5A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,VGS=-4.5V ID≡-6.4A 20 4.5 8.0 700 160 120 20 25 nC VDS=-10V,VGS=0V f=1MHz pF 30 65 120 90 ns VDD=-10V,RL=6Ω ID≡-1.0A,VGEN=-4.5V RG=6Ω 40 90 70 2008/10/05 Ver.2 Page 3 SPP9434 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/10/05 Ver.2 Page 4 SPP9434 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/10/05 Ver.2 Page 5 SPP9434 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/10/05 Ver.2 Page 6 SPP9434 P-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2008/10/05 Ver.2 Page 7 SPP9434 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2008/10/05 Ver.2 Page 8

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SPP9434S8RG

1. 物料型号： - 型号：SPP9434 - 封装：SOP-8P

2. 器件简介： - SPP9434是一款P-Channel逻辑增强型功率场效应晶体管，采用高单元密度、DMOS沟槽技术制造。该高密度工艺特别针对最小化导通电阻而设计。适用于低电压应用，如手机和笔记本电脑电源管理以及其他需要低内联功率损耗的电池供电电路，并且可以在非常小的表面贴装封装中实现。

3. 引脚分配： - 引脚1、2、3：源极（S） - 引脚4：栅极（G） - 引脚5、6、7、8：漏极（D）

4. 参数特性： - 漏源电压（VDSS）：-20V - 栅源电压（VGSS）：±12V - 连续漏极电流（ID）：-7.6A（TA=25°C）、-5.4A（TA=70°C） - 脉冲漏极电流（IDM）：-30A - 连续源极电流（Is）：-2.3A - 功率耗散（PD）：2.8W（TA=25°C）、1.8W（TA=70°C） - 工作结温（TJ）：-55至150°C - 存储温度范围（TSTG）：-55至150°C - 热阻（ROJA）：70°C/W

5. 功能详解： - SPP9434具有超低RDS(on)和最大直流电流能力。它采用SOP-8P封装设计，适用于电源管理、便携设备、电池供电系统和DC/DC转换器等应用。

6. 应用信息： - 适用于笔记本电脑的电源管理、便携设备和电池供电系统、DC/DC转换器等。

7. 封装信息： - SOP-8P封装，具体尺寸信息如下： - A: 1.47至1.73毫米 - A1: 0.10至0.25毫米 - A2: 1.45毫米 - b: 0.33至0.51毫米 - C: 0.19至0.25毫米 - D: 4.80至4.95毫米 - E: 5.80至6.20毫米 - E1: 3.80至4.00毫米 - L: 0.38至1.27毫米 - Ay: 0.076毫米 - Q: 0°至8'

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