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SPP9517

SPP9517

  • 厂商:

    SYNC-POWER

  • 封装:

  • 描述:

    SPP9517 - P-Channel Enhancement Mode MOSFET - SYNC POWER Crop.

  • 详情介绍
  • 数据手册
  • 价格&库存
SPP9517 数据手册
SPP9517 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9517 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES -40V/-10A,RDS(ON)= 16mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 22mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2009/08/20 Ver.1 Page 1 SPP9517 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number SPP9517S8RGB Package SOP- 8P Part Marking SPP9517 ※ SPP9517S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -40 ±20 Unit V V A A A W ℃ ℃ ℃/W -10 -8 -30 -2.3 2.8 1.8 -55/150 -55/150 70 2009/08/20 Ver.1 Page 2 SPP9517 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10.0V RG=6Ω VDS=-20V,VGS=0V f=1MHz VDS=0V,VGS=±20V VDS=-36V,VGS=0V VDS=-36V,VGS=0V TJ=85℃ VDS= -5V,VGS =-4.5V VGS=-10V,ID=-10A VGS=-4.5V,ID=- 8A VDS=-15V,ID=-5.7A IS=-2.3A,VGS =0V -40 -0.8 -2.5 ±100 -1 -10 -10 0.012 0.017 13 -0.8 40 10 14 2300 280 240 20 15 60 40 25 25 90 60 0.016 0.022 -1.2 55 V nA uA A Ω S V VDS=-15V,VGS=-5.0V ID= -10.0A nC pF nS 2009/08/20 Ver.1 Page 3 SPP9517 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/08/20 Ver.1 Page 4 SPP9517 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/08/20 Ver.1 Page 5 SPP9517 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/08/20 Ver.1 Page 6 SPP9517 P-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2009/08/20 Ver.1 Page 7 SPP9517 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/08/20 Ver.1 Page 8
SPP9517
1. 物料型号: - 型号为SPP9517。

2. 器件简介: - SPP9517是一种P-Channel逻辑增强型功率场效应晶体管,使用高单元密度、DMOS沟槽技术生产。这种高密度工艺特别适用于最小化导通电阻。这些器件特别适合于低电压应用、笔记本电脑电源管理以及其他电池供电电路中的高侧开关。

3. 引脚分配: - SOP-8P封装的引脚配置如下: - 引脚1:S(源极) - 引脚2:S(源极) - 引脚3:S(源极) - 引脚4:G(栅极) - 引脚5:D(漏极) - 引脚6:D(漏极) - 引脚7:D(漏极) - 引脚8:D(漏极)

4. 参数特性: - 绝对最大额定值(TA=25°C除非另有说明): - 漏源电压:-40V - 栅源电压:±20V - 25°C连续漏电流(T=150°C):-10A - 70°C连续漏电流:-8A - 脉冲漏电流:-30A - 连续源电流(二极管导通):-2.3A - 功率耗散:2.8W(TA=25°C),1.8W(TA=70°C) - 工作结温:-55/150°C - 存储温度范围:-55/150°C - 热阻(结到环境):70°C/W

5. 功能详解: - 该器件适用于笔记本电脑的电源管理、便携式设备的电池供电系统、DC/DC转换器、负载开关、DSC LCD显示器逆变器等应用。

6. 应用信息: - 如上所述,SPP9517适用于电源管理、电池供电系统、DC/DC转换器等。

7. 封装信息: - 封装类型为SOP-8P,具体尺寸和英寸信息如下: - A: 0.058"至0.068"(最小至最大) - A1: 0.004"至0.010"(最小至最大) - A2: 0.057"(标称值) - b: 0.013"至0.020"(最小至最大) - C: 0.0075"至0.0098"(最小至最大) - D: 0.189"至0.195"(最小至最大) - E: 0.228"至0.244"(最小至最大) - E1: 0.150"至0.157"(最小至最大) - L: 0.015"至0.050"(最小至最大) - P: 0至8"(最大)
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