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1N4003G

1N4003G

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N4003G - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4003G 数据手册
1N4001G - 1N4007G BY133G PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR IR(H) CJ RθJA TJ TSTG 1N 1N 1N 1N 1N 1N 1N 4001G 4002G 4003G 4004G 4005G 4006G 4007G 50 100 200 400 600 800 1000 35 50 70 100 140 200 280 400 1.0 30 1.0 5.0 50 8 45 - 65 to + 175 - 65 to + 175 420 600 560 800 700 1000 BY 133G 1300 910 1300 UNIT V V V A A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : January 10, 2004 RATING AND CHARACTERISTIC CURVES ( 1N4001G - BY133G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.0 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 24 0.8 0.6 18 0.4 12 0.2 6 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 10 Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : January 10, 2004
1N4003G
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:该芯片有48个引脚,包括电源引脚、地引脚、I/O引脚、复位引脚等,具体分配需参考芯片手册。

4. 参数特性:主频72MHz,内置64KB Flash和20KB RAM,工作电压2.0V至3.6V,工作温度范围-40至+85摄氏度。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等模块的详细功能描述。

6. 应用信息:适用于工业控制、医疗设备、消费电子等多种应用场景。

7. 封装信息:采用LQFP48封装,尺寸7x7mm。
1N4003G 价格&库存

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