1N4149

1N4149

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N4149 - HIGH SPEED SWITCHING DIODE - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4149 数据手册
1N4149 PRV : 100 Volts Io : 150 mA FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 0.079(2.0 )max. 1.00 (25.4) min. 0.150 (3.8) max. 0.020 (0.52)max. 1.00 (25.4) min. MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Surge Forward Current at t < 1s and Tj = 25°C Maximum Power Dissipation , Ta = 25 °C Maximum Forward Voltage at IF = 10 mA Maximum Reverse Current Maximum Reverse Recovery Time from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω Junction Temperature Range Storage Temperature Range at VR = 75V SYMBOL VRRM VR IF(AV) IFSM PD VF IR Trr TJ TSTG VALUE 100 75 150 1) UNIT V V mA mA mW V nA ns °C °C 500 500 1.0 5 4 175 - 65 to + 175 Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N4149 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, mA POWER DISSIPATION , mW 250 500 FIG.2 - POWER DARATING CURVE 200 400 150 300 100 200 50 100 0 0 25 50 75 100 125 150 175 0 0 25 50 75 75 100 125 150 175 AMBIENT TEMPERATURE, ( °C) AMBIENT TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 FORWARD CURRENT, mA REVERSE CURRENT, MICROAMPERES Ta = 100 °C 1.0 10 Ta = 25 °C 0.1 Ta = 25 °C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 25, 2005
1N4149
1. 物料型号:1N4149

2. 器件简介: - 1N4149是一种高速开关二极管。 - 特点包括硅外延平面二极管、高可靠性、低反向电流、低正向电压降、高速开关、无铅/无RoHS。

3. 引脚分配: - 封装为DO-35玻璃封装,轴向引脚可焊,符合MIL-STD-202标准,方法208保证。 - 极性:色环表示阴极端。

4. 参数特性: - 最大重复峰值反向电压(VRRM):100V - 最大反向电压(VR):75V - 最大平均正向电流(IF(AV)):150mA - 最大浪涌正向电流(IFSM):500mA(t < 1s,Tj = 25°C) - 最大功率耗散(PD):500mW(Ta = 25°C) - 最大正向电压(VF)在IF = 10mA时:1.0V - 最大反向电流(IR)在VR=75V时:5nA - 最大反向恢复时间(Trr)从IF = 10mA到IR = 1mA,VR = 6V,RL = 100:4ns - 结温范围(TJ):-65 to +175°C

5. 功能详解: - 1N4149适用于高速开关应用,具有低正向电压降和高速开关特性,同时保持低反向电流,适合于需要快速响应和低功耗的电路。

6. 应用信息: - 适用于高速开关和整流应用,特别是在需要快速响应和低功耗的场合。

7. 封装信息: - 封装类型:DO-35玻璃封装 - 引脚:轴向引脚可焊 - 重量:约0.13克 - 安装位置:任意
1N4149 价格&库存

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