0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N4448

1N4448

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N4448 - HIGH SPEED SWITCHING DIODE - SynSemi, Inc.

  • 数据手册
  • 价格&库存
1N4448 数据手册
1N4448 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current (1) Half Wave Rectification with Resistive Load , f ≥ 50 Hz Maximum Surge Forward Current at t < 1s , Tj = 25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range 25 °C ambient temperature unless otherwise specified.) Symbol VRM VR IF IF(AV) IFSM PD TJ TS Value 100 75 200 150 0.5 500 175 -65 to + 175 Unit V V mA mA A mW °C °C Note : (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time Symbol IR VF V(BR)R Cd Trr Test Condition V R = 20 V VR = 20 V , Tj = 150 °C IF = 10 mA IR = 100 µA (pulsed) f = 1MHz ; VR = 0 IF = 10 mA to IR = 1mA VR = 6V , RL = 100 Ω Min. 100 - Typ. - Max. 25 50 1.0 4.0 4.0 Unit nA µA V V pF ns Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N4448 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 200 1000 AVERAGE FORWARD OUTPUT CURRENT, mA 150 Forward Current , IF (mA) 100 10 TJ = 25°C 100 1 50 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE 1.2 1.0 Diode Capacitance , Cd (pF) 0.9 0.8 0.7 f = 1MHz; 0.6 TJ = 25°C 0.5 0.4 0 10 20 Reverse Voltage , VR (V) Page 2 of 2 Rev. 02 : March 25, 2005
1N4448 价格&库存

很抱歉,暂时无法提供与“1N4448”相匹配的价格&库存,您可以联系我们找货

免费人工找货
1N4448W
    •  国内价格
    • 1+0.099
    • 100+0.0924
    • 300+0.0858
    • 500+0.0792
    • 2000+0.0759
    • 5000+0.07392

    库存:6794

    1N4448W
    •  国内价格
    • 1+0.07934
    • 30+0.07647
    • 100+0.07072
    • 500+0.06497
    • 1000+0.06209

    库存:1075

    1N4448W
    •  国内价格
    • 1+0.063
    • 100+0.0588
    • 300+0.0546
    • 500+0.0504
    • 2000+0.0483
    • 5000+0.04704

    库存:1470

    1N4448WS
      •  国内价格
      • 50+0.07991
      • 200+0.07492
      • 600+0.06992
      • 2000+0.06493
      • 5000+0.05994
      • 10000+0.05644

      库存:490