0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N5391

1N5391

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N5391 - SILICON RECTIFIERDIODES - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5391 数据手册
1N5391 - 1N5399 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIERDIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF IFSM VF IR IR(H) CJ RθJA TJ TSTG 1N 1N 1N 1N 1N 1N 1N 1N 1N 5391 5392 5393 5394 5395 5396 5397 5398 5399 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 50 1.4 5.0 50 15 26 - 65 to + 175 - 65 to + 175 500 350 500 600 420 600 800 560 800 1000 700 1000 UNIT V V V A A V µA µA pF °C/W °C °C (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : January 10, 2004 RATING AND CHARACTERISTIC CURVES ( 1N5391 - 1N5399 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 40 1.2 0.9 30 0.6 20 0.3 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 10 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : January 10, 2004
1N5391
文档中提到的物料型号为BQ25896,这是德州仪器(Texas Instruments)生产的一款用于电池充电管理的集成电路。

器件简介指出BQ25896专为USB电源设备设计,支持USB充电端口(BC1.2)和增强型快速充电。

引脚分配包括充电电流设置、I2C通信、电池电压监测、电源开关控制等。

参数特性包括最大充电电流、充电电压、输入电压范围等。

功能详解涉及其电池充电算法、充电状态指示、故障保护机制等。

应用信息包括便携式设备、移动电源、电动工具等。

封装信息表明BQ25896通常采用QFN封装形式。
1N5391 价格&库存

很抱歉,暂时无法提供与“1N5391”相匹配的价格&库存,您可以联系我们找货

免费人工找货