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1N5393G

1N5393G

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N5393G - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5393G 数据手册
1N5391G - 1N5399G PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL 1N5391G 1N5392G 1N5393G 1N5394G 1N5395G 1N5396G 1N5397G 1N5398G 1N5399G UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 500 350 500 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 50 1.1 5.0 50 15 30 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : January 10, 2004 RATING AND CHARACTERISTIC CURVES ( 1N5391G - 1N5399G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 40 1.2 0.9 30 0.6 20 0.3 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 10 FORWARD CURRENT, AMPERES Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 0.1 T J = 25 °C Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : January 10, 2004
1N5393G
1. 物料型号: - 型号为1N5391G至1N5399G。

2. 器件简介: - 这些器件是玻璃钝化芯片硅整流器,具有高电流能力、高可靠性、低反向电流和低正向电压降的特点。

3. 引脚分配: - 引脚为轴向引脚,可焊接,符合MIL-STD-202标准。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50至1000伏特。 - 最大RMS电压(VRMS):35至700伏特。 - 最大直流阻断电压(VDc):50至1000伏特。 - 最大平均正向电流(IF(AV)):1.5安培。 - 峰值正向浪涌电流(IFSM):50安培。 - 最大正向电压(VF):1.1伏特。 - 最大直流反向电流(IR):5.0微安培。 - 额定直流阻断电压下100°C时的最大直流反向电流(IR(H)):50微安培。 - 典型结电容(CJ):15皮法。 - 典型热阻(ROJA):30°C/W。 - 结温范围(TJ):-65至+175°C。 - 存储温度范围(TSTG):-65至+175°C。

5. 功能详解应用信息: - 这些器件适用于需要高电流和高可靠性的整流应用,如电源、电机驱动等。

6. 封装信息: - 封装为DO-41模塑塑料封装,环氧树脂为UL94V-0级阻燃,引脚为轴向引脚,极性由色带表示阴极端,可任意位置安装。
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