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1N5394

1N5394

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N5394 - SILICON RECTIFIERDIODES - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5394 数据手册
1N5391 - 1N5399 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIERDIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF IFSM VF IR IR(H) CJ RθJA TJ TSTG 1N 1N 1N 1N 1N 1N 1N 1N 1N 5391 5392 5393 5394 5395 5396 5397 5398 5399 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 50 1.4 5.0 50 15 26 - 65 to + 175 - 65 to + 175 500 350 500 600 420 600 800 560 800 1000 700 1000 UNIT V V V A A V µA µA pF °C/W °C °C (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 01 : January 10, 2004 RATING AND CHARACTERISTIC CURVES ( 1N5391 - 1N5399 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 50 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Ta = 25 °C 40 1.2 0.9 30 0.6 20 0.3 10 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 10 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES Ta = 100 °C 1.0 1.0 Pulse Width = 300 µs 2% Duty Cycle 0.1 TJ = 25 °C 0.1 Ta = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : January 10, 2004
1N5394
1. 物料型号: - 1N5391-1N5399

2. 器件简介: - 这是一系列硅整流二极管,由SyNSEMI SYISEMI SEMICONDUCTOR制造,封装形式为DO-41。

3. 引脚分配: - 这些二极管具有轴向引脚,根据MIL-STD-202标准,引脚焊接性能有保证。颜色带表示阴极端,可以任意位置安装。

4. 参数特性: - 这些二极管具有高电流能力、高浪涌电流能力、高可靠性、低反向电流和低正向电压降。 - 最大重复峰值反向电压(VRRM):50V至1000V不等。 - 最大RMS电压(VRMS):35V至700V不等。 - 最大直流阻断电压(Voc):50V至1000V不等。 - 最大平均正向电流(IF):1.5A。 - 正向峰值浪涌电流(IFSM):50A。 - 最大正向电压(VF):1.4V。 - 最大直流反向电流(IR):5.0mA至50μA不等。 - 典型结电容(CJ):15pF。 - 典型热阻(ROJA):26°C/W。 - 结温范围(TJ):-65°C至+175°C。 - 存储温度范围(TSTG):-65°C至+175°C。

5. 功能详解: - 这些二极管适用于高电流和高浪涌电流的应用,具有低反向电流和低正向电压降,适合于整流应用。

6. 应用信息: - 适用于需要高电流和高可靠性的整流应用。

7. 封装信息: - 封装形式为DO-41,采用模塑塑料外壳,环氧树脂为UL94V-0级阻燃材料。
1N5394 价格&库存

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