1N5407G

1N5407G

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N5407G - GLASS PASSIVATED JUNCTION SILICON RECTIFIERS - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5407G 数据手册
1N5400G - 1N5408G PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 201AD 1.00 (25.4) MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 400 280 400 3.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF IR IR(H) CJ RθJA TJ TSTG 150 1.0 5.0 50 50 15 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 31, 2005 RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 3.0 150 AVERAGE FORW ARD OUTPUT CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORW ARD SURGE CURRENT, AMPERES Ta = 25 °C 120 2.4 1.8 90 1.2 60 0.6 30 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS JUNCTION CAPACITANCE, (pF) NUMBER OF CYCLES AT 60Hz FIG 4 . - TYPICAL JUNCTION CAPACITANCE 100 100 50 FORW ARD CURRENT, AMPERES TJ = 25 °C 10 10 5 1.0 Pulse Width = 300 µs 2% Duty Cycle TJ = 25 °C 1 1 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS 0.1 FIG. 5 - T YPICAL REVERSE CHARACTERISTICS 0.01 0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ta = 100 ฐC REVERSE CURRENT, MICROAMPERES FORWARD VOLTAGE, VOLTS 1.0 0.1 Ta = 25 ฐC 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 31, 2005
1N5407G
1. 物料型号: - 型号为1N5400G至1N5408G,这些是玻璃钝化结硅整流二极管。

2. 器件简介: - 这些器件是玻璃钝化芯片,具有高电流能力、高可靠性、低反向电流和低正向电压降。它们是无铅/无RoHS的。

3. 引脚分配: - 引脚为轴向引脚,可焊接,符合MIL-STD-202标准,方法208保证。极性由色带表示阴极端。

4. 参数特性: - 最大重复峰值反向电压(VRRM)从50V至1000V不等。 - 最大RMS电压(VRMS)从35V至700V不等。 - 最大直流阻断电压(VDC)从50V至1000V不等。 - 最大平均正向电流(IF(AV))为3.0A。 - 正向峰值浪涌电流(IFSM)为150A。 - 最大正向电压(VF)在3.0A时为1.0V。 - 25°C时最大直流反向电流(IR)为5.0A。 - 100°C时在额定直流阻断电压下的最大直流反向电流(IR(H))为50A。 - 典型结电容(CJ)为50pF。 - 典型热阻(RaJA)为15°C/W。 - 结温范围(TJ)为65至+175℃。 - 存储温度范围(TSTG)为-65至+175℃。

5. 功能详解: - 这些二极管用于整流应用,具有高可靠性和低功耗特性,适用于各种电源整流场合。

6. 应用信息: - 适用于电源整流、电机控制和类似应用,特别是在需要高可靠性和低功耗的场合。

7. 封装信息: - 封装为DO-201AD塑封,环氧树脂为UL94V-0级阻燃,引脚为轴向引脚,可焊接。
1N5407G 价格&库存

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