1N5817

1N5817

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N5817 - SCHOTTKY BARRIER RECTIFIER DIODES - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5817 数据手册
1N5817 - 1N5819 PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES DO - 41 1.00 (25.4) MIN. 0.107 (2.74) 0.080 (2.03) 0.205 (5.20) 0.160 (4.10) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.312 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375", 9.5mm Lead Length at TL = 90 °C Maximum Peak Forward Surge Current, 8.3ms single half sine wave Superimposed on rated load (JEDEC Method) TL = 70 °C Maximum Forward Voltage at IF = 1.0 A Maximum Reverse Current Ta = 25 °C at Rated DC Blocking Voltage (Note 1) Ta = 100 °C Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Junction Temperature Range Storage Temperature Range SYMBOL V RRM V RMS V DC IF(AV) 1N5817 20 14 20 1N5818 30 21 30 1.0 1N5819 40 28 40 UNIT V V V A I FSM VF IR I R(H) R θJL CJ TJ T STG 0.45 25 0.55 1.0 10 15 110 - 65 to + 125 - 65 to + 125 0.6 A V mA mA °C/W pF °C °C Notes : (1) Pulse Test : Pulse W idth = 300 µ s, Duty Cycle = 2%. (2) Thermal Resistance from junction to lead, PC board Mounting with 0.375" (9.5mm) Lead Lengths and 1.5 in 2 (38.1mm2) copper pads. (3) Measured at 1 MHz and applied reverse voltage of 4.0 volts. Page 1 of 2 Rev. 01 : January 10, 2004 RATING AND CHARACTERISTIC CURVES ( 1N5817 - 1N5819 ) FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, AMPERES 1.0 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 25 0.8 PEAK FORWARD SURGE CURRENT, AMPERES 20 40 60 80 100 120 140 20 0.6 15 0.4 10 0.2 5 0 0 0 1 2 4 6 10 20 40 60 100 LEAD TEMPERATURE, (°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 20 1N5817 10 1N5819 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MILLIAMPERES 10 TJ = 100 °C 1.0 1N5818 1.0 0.1 TJ = 25 °C TJ = 25 °C PULSE WIDTH = 300µ s DUTY CYCLE = 1% 0.1 0.1 0.01 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 01 : January 10, 2004
1N5817
1. 物料型号: - 型号包括1N5817、1N5818和1N5819。

2. 器件简介: - 肖特基势垒整流二极管,具有高电流能力、高浪涌电流能力、高可靠性、高效率、低功耗、低成本和低正向电压降的特点。

3. 引脚分配: - 轴向引脚,可按照MIL-STD-202标准方法208保证的可焊性。

4. 参数特性: - 最大重复峰值反向电压:1N5817为20V,1N5818为30V,1N5819为40V。 - 最大RMS电压:1N5817为14V,1N5818为21V,1N5819为28V。 - 最大直流阻断电压:1N5817为20V,1N5818为30V,1N5819为40V。 - 最大平均正向电流:1N5818为1.0A。 - 最大正向电压:1N5817为0.45V,1N5818为0.55V,1N5819为0.6V。 - 最大反向电流:1N5817为1.0mA,1N5819为10mA(在额定直流阻断电压下,环境温度为100°C)。 - 典型热阻:1N5817为15°C/W。 - 典型结电容:1N5817为110pF。

5. 功能详解: - 该二极管适用于需要高电流、高浪涌电流能力的应用场景,并且具有高效率和低功耗的特点。

6. 应用信息: - 可用于需要高电流和高浪涌电流能力的整流应用。

7. 封装信息: - 封装类型为DO-41模塑塑料,环氧树脂为UL94V-0级阻燃,引脚为轴向引脚。
1N5817 价格&库存

很抱歉,暂时无法提供与“1N5817”相匹配的价格&库存,您可以联系我们找货

免费人工找货