0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
1N914A

1N914A

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N914A - HIGH SPEED SWITCHING DIODES - SynSemi, Inc.

  • 数据手册
  • 价格&库存
1N914A 数据手册
1N914/A/B FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Repetitive peak forward current: max. 225 mA • Pb / RoHS Free HIGH SPEED SWITCHING DIODES DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current Maximum Power Dissipation Maximum Repetitive Peak Forward Current Maximum Non-repetitive Peak Forward Current at t = 1s Maximum Junction Temperature Storage Temperature Range (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol VRRM VRM IF PD IFRM IFSM TJ TS (TJ = 25°C unless otherwise noted) Value 100 75 75 250 225 0.5 175 -65 to + 200 Unit V V mA mW mA A °C °C Electrical Characteristics Parameter Reverse Current Symbol IR 1N914 1N914A 1N914B 1N914B Test Condition VR = 20 V VR = 20 V , Tj = 150 °C IF = 10 mA IF = 20 mA IF = 5 mA IF = 100 mA f = 1MHz ; VR = 0 IF = 10 mA to I R = 60 mA RL = 100 Ω ; measured at IR = 1mA Min 0.62 - Typ - Max 25 50 1.0 1.0 0.72 1.0 4.0 4 Unit nA μA V V V V pF ns Forward Voltage VF Diode Capacitance Reverse Recovery Time Cd Trr Page 1 of 2 Rev. 03 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N914/A/B ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE. 100 CONTINUOUS FORWARD CURRENT, IF (mA) Lead Length 10mm. 75 1000 FIG. 2 TYPICAL FORWARD VOLTAGE Forward Current , IF (mA) 100 10 50 1 TJ = 25°C 25 0.1 0 0 100 200 0.01 0 0.4 0.8 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE 1.2 103 FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE 1.0 VR = 75V Diode Capacitance , Cd (pF) 0.9 0.8 Reverse Current , IR (μA) f = 1MHz; TJ = 25°C 0 10 20 102 10 0.7 1 0.6 0.5 10-1 0.4 10-2 0 100 200 Reverse Voltage , V R (V) Junction Temperature , Ta (°C) Page 2 of 2 Rev. 03 : March 25, 2005
1N914A 价格&库存

很抱歉,暂时无法提供与“1N914A”相匹配的价格&库存,您可以联系我们找货

免费人工找货