0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BAY80

BAY80

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    BAY80 - SWITCHING DIODE - SynSemi, Inc.

  • 数据手册
  • 价格&库存
BAY80 数据手册
BAY80 FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 120 V • Repetitive peak reverse voltage: max. 150 V • Repetitive peak forward current: max. 625 mA. • Pb / RoHS Free SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified .) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current Maximum Repetitive Peak Forward Current Maximum Non-repetitive Peak Forward Current at t = 1ms, Tj = 25 °C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Symbol VRRM VRM IF IF(AV) IFRM IFSM PD TJ TS (TJ = 25°C unless otherwise noted) Value 150 120 250 200 625 1 400 175 -65 to + 175 Unit V V mA mA mA A mW °C °C Electrical Characteristics Parameter Reverse Current Forward Voltage Symbol IR VF Test Condition VR = 120 V VR = 120 V, Tj = 150°C IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA Min. 0.65 0.73 0.78 - Typ. - Max. 100 100 0.80 0.92 1.00 1.07 6 50 Unit nA μA V Diode Capacitance Reverse Recovery Time Cd Trr f = 1MHz ; VR = 0 IF = 30mA , I R = 30mA IRR = 3mA , R L = 100 Ω measured at IR = 3 mA pF ns Page 1 of 2 Rev. 03 : January 28, 2006 RATING AND CHARACTERISTIC CURVES ( BAY80 ) FIG. 1 MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT VERSUS AMBIENT TEMPERATURE. 1000 Lead Length 10mm. AVERAGE FORWARD CURRENT, IF(AV) (mA) 400 FIG. 2 TYPICAL FORWARD VOLTAGE 500 Forward Current , IF (mA) 100 300 10 TJ = 25°C 1 200 100 0 0 100 200 0.1 0 0.4 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE 1.6 103 VR = 120V Diode Capacitance , Cd (pF) 1.4 f = 1MHz; TJ = 25°C Reverse Current , IR (μA) 102 10 1.2 1 1.0 10-1 0.8 0 10 20 10-2 0 100 200 Reverse Voltage , VR (V) Junction Temperature , Ta (°C) Page 2 of 2 Rev. 03 : January 28, 2006
BAY80 价格&库存

很抱歉,暂时无法提供与“BAY80”相匹配的价格&库存,您可以联系我们找货

免费人工找货