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BR1006

BR1006

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    BR1006 - SILICON BRIDGE RECTIFIERS - SynSemi, Inc.

  • 数据手册
  • 价格&库存
BR1006 数据手册
BR1000 - BR1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS BR10 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) 0.75 (19.1) Min. * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.30 (7.62) 0.25 (6.35) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNIT V V V A A A2S V µA µA °C/W °C °C VRRM VRMS VDC IF(AV) IFSM I 2t VF IR IR(H) RθJC TJ TSTG 50 35 50 100 70 100 200 140 200 400 280 400 10 300 160 1.0 10 200 2.5 - 40 to + 150 - 40 to + 150 600 420 600 800 560 800 1000 700 1000 Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 12 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 10 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 250 8 200 T J = 50 ° C 6 150 4 100 2 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x8.2cm x 0.3cm ) Al.-PLATE 0 25 50 75 100 125 150 175 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 Pulse W idth = 300 µs 1 % Duty Cycle FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 T J = 100 ° C FORWARD CURRENT, AMPERES 10 1.0 1.0 0.1 T J = 25 ° C T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE V OLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
BR1006 价格&库存

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