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BR3502

BR3502

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    BR3502 - SILICON BRIDGE RECTIFIERS - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BR3502 数据手册
BR3500 - BR3512 PRV : 50 - 1200 Volts Io : 35 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 17.5 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Typical Thermal Resistance at Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM I 2t VF IR IR(H) RθJC RθJA TJ TSTG BR 3500 50 35 50 BR 3501 100 70 100 BR 3502 200 140 200 BR 3504 400 280 400 35 BR 3506 600 420 600 BR 3508 800 560 800 BR 3510 1000 700 1000 BR 3512 1200 840 1200 UNIT V V V A A A2S V µA µA °C/W °C °C °C 400 660 1.1 10 200 1.5 10 - 40 to + 150 - 40 to + 150 1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR3500 - BR3512 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 42 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 600 35 PEAK FORW ARD SURGE CURRENT, AMPERES AVERAGE FORW ARD OUTPUT CURRENT AMPERES 500 28 400 T J = 50 °C 21 300 14 HEAT-SINK MOUNTING, Tc 7.5" x 3.5" x 4.6" THK. (19cm x 9cm x 11.8cm) Al.-Finned plate 200 7 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 FORW ARD CURRENT, AMPERES T J = 100 °C REVERSE CURRENT, MICROAMPERES 10 1.0 1.0 Pulse Width = 300 µs 1 % Duty Cycle 0.1 T J = 25 °C T J = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
BR3502
1. 物料型号: - 型号为SYNSEMI SEMICONDUCTOR BR3500 - BR3512,这是一系列硅桥整流器。

2. 器件简介: - 这些器件是高电流能力的硅桥整流器,具有高浪涌电流能力、高可靠性、低反向电流和低正向电压降。它们不含铅和RoHS(限制有害物质使用)。

3. 引脚分配: - 引脚为镀层,规格为0.25英寸(6.35毫米)的Faston,极性符号标记在外壳上。

4. 参数特性: - 最大重复峰值反向电压(VRRM):50至1200伏不等,根据型号不同。 - 最大RMS电压(VRMS):35至840伏不等。 - 最大直流阻断电压(Voc):50至1200伏不等。 - 最大平均正向电流(IF(AV)):35安培(Tc = 55°C时)。 - 正向浪涌电流(IFSM):400安培(单半正弦波,叠加在额定负载上,JEDEC方法)。 - 正向电压每二极管在IF = 17.5 A时(VF):1.1伏。 - 最大直流反向电流(IR):10微安(Ta= 25°C时)和200微安(Ta= 100°C时)。 - 典型热阻(ROJC):1.5°C/W。 - 典型从结到环境的热阻(ROJA):10°C/W。 - 工作结温范围(TJ):40至+150°C。 - 存储温度范围(TSTG):-40至+150°C。

5. 功能详解应用信息: - 这些硅桥整流器适用于需要高电流和高浪涌电流能力的场合,如电源整流等。

6. 封装信息: - 器件采用桥式封装,环氧树脂封装,UL94V-0级阻燃,使用时需在散热器上安装,并在桥和安装表面之间使用硅胶热导电膏以获得最大的热传递效率。
BR3502 价格&库存

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