BR5006

BR5006

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    BR5006 - SILICON BRIDGE RECTIFIERS - SynSemi, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BR5006 数据手册
BR5000 - BR5010 PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability High efficiency Low reverse current Low forward voltage drop SILICON BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF=25 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL BR5000 BR5001 BR5002 BR5004 BR5006 BR5008 BR5010 UNIT V V V A A A 2S V µA µA °C/W °C °C VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) Rθ JC TJ TSTG 50 35 50 100 70 100 200 140 200 400 280 400 50 500 660 1.1 10 200 1 - 40 to + 150 - 40 to + 150 600 420 600 800 560 800 1000 700 1000 Notes : 1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES (BR5000 - BR5010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT HEAT-SINK MOUNTING, Tc 9" x 5" x 4.6" THK. 5 5 5 (22.9 x 12.7 x 11.7cm) 0 0 0 Al.-Finned . FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 600 60 AVERAGE FORWARD OUTPUT CURRENT AMPERES 50 500 40 400 T J = 50 ° C 30 300 20 200 10 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 T J = 100 °C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 0.1 T J = 25 ° C T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005
BR5006
1. 物料型号: - BR5000至BR5010系列硅桥整流器。

2. 器件简介: - 这些器件是硅桥整流器,具有高耐压、高浪涌电流能力、高可靠性、高效率、低反向电流和低正向电压降等特点。它们是无铅/无RoHS的,封装在带有散热器的模塑料外壳中。

3. 引脚分配: - 引脚为镀层,规格为0.25英寸(6.35毫米)的Faston。

4. 参数特性: - 最高重复峰值反向电压(VRRM)从50V至1000V不等。 - 最大RMS电压(VRMS)从35V至700V不等。 - 最大直流阻断电压(VDc)从50V至1000V不等。 - 最大平均正向电流(IF(AV))在55°C时为50A。 - 峰值正向浪涌电流(IFSM)为500A。 - 最大正向电压每二极管(VF)为1.1V。 - 最大直流反向电流(IR)在25°C时为10mA,在100°C时为200μA。 - 典型热阻(ROJC)为1°C/W。 - 工作结温范围为-40至+150°C。 - 存储温度范围为-40至+150°C。

5. 功能详解: - 这些整流器适用于单相、半波、60Hz的电阻性或感性负载。对于电容性负载,需要将电流降低20%。它们能够在高效率下处理高电流和高电压,同时保持低反向电流和低正向电压降。

6. 应用信息: - 这些硅桥整流器适用于需要高电流和高电压处理能力的应用,如电源、电机控制和工业电子设备。

7. 封装信息: - 封装为模塑料外壳,内部集成了散热器。安装时需要在桥和安装表面之间使用硅脂以获得最大的热传递效率。
BR5006 价格&库存

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